TC7LX1108WBG
CMOS Digital Integrated Circuits
Silicon Monolithic
TC7LX1108WBG
1. Functional Description
•
Low-Voltage, Low-Power 8-Bit Dual-Supply Bus Transceiver with Auto Direction Sensing
2. General
The TC7LX1108WBG is an advanced high-speed dual-supply 8-bit bus transceiver fabricated with silicon-gate
CMOS technology.
The TC7LX1108WBG is designed for use as an interface between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, and 3.3-
V voltage systems.
The voltage translator automatically senses the direction of data transmission, eliminating the need for a direction
control input. When the Output Enable (OE) input is low, the device is disabled, effectively isolating the buses.
All inputs and outputs of the TC7LX1108WBG can tolerate overvoltage conditions up to 3.6 V.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Voltage translation between arbitrary voltage levels from 1.2 V to 3.6 V.
High-speed operation: t
pd
= 4.7 ns (max) (V
CCA
= 1.8
±
0.15 V, V
CCB
= 3.3
±
0.3 V)
Latch-up performance:
±300
mA
ESD performance:
Machine model
≥ ±200
V, Human body model
≥ ±2000
V
Ultra-small package: WCSP24C
The A-bus and B-bus are allowed to float. (when OE = Low)
3.6-V tolerant function and power-down protection provided on all inputs and outputs.
All output ports are disabled when either V
CC
is switched off (V
CCA/B
= 0 V).
4. Packaging and Pin Assignment (Top View)
S-UFBGA24-0303-0.40A01
4.1. Pin Assignment
1
A
B
C
D
E
B8
A8
GND
A4
B4
2
V
CCB
GND
OE
V
CCB
3
B7
A7
V
CCA
A3
B3
4
B6
A6
GND
A2
B2
5
B5
A5
V
CCA
A1
B1
1
2011-06-17
Rev.1.0
TC7LX1108WBG
5. Marking
Fig. 5.1 Marking
6. Block Diagram
Fig. 6.1 Block Diagram
2
2011-06-17
Rev.1.0
TC7LX1108WBG
7. Internal Equivalent Circuit
The TC7LX1108WBG does not have a control signal that controls the direction of data flow between A and B. In
a DC state, the output circuit holds either High or Low level, but since it is designed to have a weak drive strength
(with a typical output resistance of 5.5 kΩ), an overdrive signal from the external driver can change the direction
of data flow.
The output one-shot circuits detect either a rising or falling edge on the A or B port. During the rise time, the
output one-shot circuit associated with the PMOS transistors turns it on for a certain period to speed up a
transition from Low to High. Likewise, during the fall time, the output one-shot circuit associated with the NMOS
transistors turns it on to speed up a transition from High to Low.
Fig. 7.1 Internal Equivalent Circuit
8. Principle of Operation
8.1. Truth Table
Input
OE
H
L
Function
A port = B port
Disconnect
3
2011-06-17
Rev.1.0
TC7LX1108WBG
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage (OE)
Bus I/O voltage
Symbol
V
CCA
V
CCB
V
IN
V
I/OA
V
I/OB
Input diode current
I/O diode current
Output current
V
CC
/ground current per supply pin
Power dissipation
Storage temperature
I
IK
I
I/OK
I
OUTA
I
OUTB
I
CCA
I
CCB
P
D
T
stg
(Note 3)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Note
Rating
-0.5 to 4.6
-0.5 to 4.6
-0.5 to 4.6
-0.5 to 4.6
-0.5 to V
CCA
+0.5
-0.5 to 4.6
-0.5 to V
CCB
+0.5
-50
±50
±25
±25
±50
±50
400
-65 to 150
mW
mA
Unit
V
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Output in OFF state.
Note 2: High or low state. I
OUT
absolute maximum rating must be observed.
Note 3: V
OUT
< GND, V
OUT
> V
CC
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage (OE)
Bus I/O voltage
Symbol
V
CCA
V
CCB
V
IN
V
I/OA
V
I/OB
Input rise time
Input fall time
Operating temperature
T
opr
dt/dv
(Note 1)
(Note 2)
(Note 1)
(Note 2)
V
IN
= 0.8 to 2.0 V, V
CCA
= 2.5 V,
V
CCB
= 3.0 V
Note
Test Condition
Rating
1.2 to 3.6
1.2 to 3.6
0 to 3.6
0 to 3.6
0 to V
CCA
0 to 3.6
0 to V
CCB
0 to 10
0 to 10
-40 to 85
ns/V
Unit
V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs and bus inputs must be tied to either V
CC
or GND. Please connect both bus inputs and the bus
outputs with V
CC
or GND when the I/O of the bus terminal changes by the function. In this case, please note
that the output is not short-circuited.
Note 1: Output in OFF state.
Note 2: High or low state
4
2011-06-17
Rev.1.0
TC7LX1108WBG
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
85
Characteristics
High-level input voltage
Symbol
V
IHA
OE, An
Test Condition
V
CCA
(V)
1.2
1.4
1.65
2.3
3.0
3.6
V
IHB
Bn
1.2 to 3.6
1.2
1.4
1.65
2.3
3.0
3.6
Low-level input voltage
V
ILA
OE, An
1.2
1.4
1.65
2.3
3.0
3.6
V
ILB
Bn
1.2 to 3.6
1.2
1.4
1.65
2.3
3.0
3.6
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Output resistance
Input leakage current
Power-OFF leakage current
Quiescent supply current
V
OHA
V
OHB
V
OLA
V
OLB
I
OZA
I
OZB
R
OUT
I
IN
I
OFF
I
CCA
I
CCB
I
CCA
I
CCB
V
IN
= V
IH
or V
IL
, I
OHA
= -20
µA
V
IN
= V
IH
or V
IL
, I
OHB
= -20
µA
V
IN
= V
IH
or V
IL
, I
OLA
= 20
µA
V
IN
= V
IH
or V
IL
, I
OLB
= 20
µA
V
IN
= V
IH
or V
IL
V
OUT
= 0 to 3.6 V
V
IN
(OE) = 0 to 3.6 V
V
IN
, V
OUT
= 0 to 3.6 V
V
INA
= V
CCA
or GND
V
INB
= V
CCB
or GND
V
CCA
≤
(V
IN
, V
OUT
)
≤
3.6 V
V
CCB
≤
(V
IN
, V
OUT
)
≤
3.6 V
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
0
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
0
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
1.2 to 3.6
V
CCB
(V)
1.2 to 3.6
Min
1.10
1.20
1.35
1.70
2.00
2.20
1.10
1.20
1.35
1.70
2.00
2.20
V
CCA
-0.4
V
CCB
-0.4
3.85
Max
0.10
0.20
0.30
0.50
0.70
0.80
0.10
0.20
0.30
0.50
0.70
0.80
0.4
0.4
±2.0
±2.0
7.15
±1.0
2.0
5.0
5.0
±5.0
±5.0
kΩ
µA
µA
Unit
V
5
2011-06-17
Rev.1.0
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