DISCRETE SEMICONDUCTORS
DATA SHEET
BF996S
N-channel dual-gate MOS-FET
Product specification
File under Discrete Semiconductors, SC07
April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES
•
Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
APPLICATIONS
•
RF applications such as:
– UHF television tuners
– Professional communication equipment.
PINNING
PIN
1
2
3
4
SYMBOL
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Top view
Marking code:
MHp.
MAM039
handbook, halfpage
BF996S
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
4
3
g
2
g
1
d
DESCRIPTION
1
2
s,b
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
Y
fs
C
ig-1s
C
rs
F
PARAMETER
drain-source voltage
drain current
total power dissipation
junction temperature
transfer admittance
feedback capacitance
noise figure
f = 1 kHz; I
D
= 10 mA; V
DS
= 15 V; V
G2−S
= 4 V
up to T
amb
= 60
°C
CONDITIONS
−
−
−
−
18
TYP.
MAX.
20
30
200
150
−
2.6
−
−
UNIT
V
mA
mW
°C
mS
pF
fF
dB
input capacitance at gate 1 f = 1 MHz; I
D
= 10 mA; V
DS
= 15 V; V
G2−S
= 4 V 2.3
f = 1 MHz; I
D
= 10 mA; V
DS
= 15 V; V
G2−S
= 4 V 25
f = 200 MHz G
S
= 2 mS; B
S
= B
Sopt
;
I
D
= 10 mA; V
DS
= 15 V; V
GS−2
= 4 V
1
April 1991
2
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
I
D
I
D(AV)
I
G1-S
I
G1-S
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
drain current (DC)
average drain current
gate 1 source
gate 2 source
total power dissipation
storage temperature range
junction temperature
up to T
amb
= 60
°C;
note 1
CONDITIONS
−
−
−
−
−
−
−65
−
MIN.
BF996S
MAX.
20
30
30
±10
±10
200
+150
150
V
UNIT
mA
mA
mA
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
VALUE
460
UNIT
K/W
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
handbook, halfpage
200
MGE792
Ptot
(mW)
100
0
0
100
Tamb (°C)
200
Fig.2 Power derating curve.
April 1991
3
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
STATIC CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
G1−SS
I
G2−SS
V
(BR)G1-SS
V
(BR)G2-SS
I
DSS
V
(P)G1-S
V
(P)G2-S
PARAMETER
gate cut-off current
gate cut-off current
gate-source breakdown voltage
gate-source breakdown voltage
drain current
gate-source cut-off current
gate-source cut-off current
CONDITIONS
V
G1-S
=
±5
V; V
G2-S
= V
DS
= 0
V
G2-S
=
±5
V; V
G1-S
= V
DS
= 0
I
G1-S
=
±10
mA; V
G2-S
= V
DS
= 0
I
G2-S
=
±10
mA; V
G1-S
= V
DS
= 0
V
DS
= 15 V; V
G1-S
= 0; V
G2-S
= 4 V
I
D
= 20
µA;
V
DS
= 15 V; V
G2-S
= 4 V
I
D
= 20
µA;
V
DS
= 15 V; V
G1-S
= 0
MIN.
−
−
±6
±6
4
−
−
BF996S
MAX.
±50
±50
±20
±20
20
−2.5
−2
UNIT
nA
nA
V
V
mA
V
V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): I
D
= 10 mA; V
DS
= 15 V; V
G2-S
= 4 V; T
amb
= 25
°C.
SYMBOL
Y
fs
C
ig1-s
C
ig2-s
C
rs
C
os
F
G
P
PARAMETER
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
power gain
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
;
G
L
= 0.5 mS; B
L
= B
Lopt
f = 800 MHz; G
S
= 3.3 mS;
B
S
= B
Sopt
; G
L
= 1 mS; B
L
= B
Lopt
CONDITIONS
MIN.
15
−
−
−
−
−
−
−
TYP.
18
2.3
1.2
25
0.8
1
1.8
25
18
MAX.
−
2.6
−
−
−
−
−
−
−
UNIT
mS
pF
pF
fF
pF
dB
dB
dB
dB
f = 800 MHz; G
S
= 3.3 mS; B
S
= B
Sopt
−
April 1991
4
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
BF996S
handbook, full pagewidth
0.75
0.60
0.150
0.090
4
0.1
max
10
max
o
3.0
2.8
1.9
3
B
A
0.2 M A B
10
max
o
1.4
1.2
2.5
max
1
1.1
max
o
2
0.1 M A B
30
max
0.88
0
0.1
1.7
0.48
0
0.1
MBC845
TOP VIEW
Dimensions in mm.
See also
Soldering recommendations.
Fig.3 SOT143.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
April 1991
5
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