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CBS05F30_14

Description
Schottky Barrier Diode Silicon Epitaxial
File Size124KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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CBS05F30_14 Overview

Schottky Barrier Diode Silicon Epitaxial

CBS05F30
Schottky Barrier Diode
Silicon Epitaxial
CBS05F30
1. Applications
High-Speed Switching
2. Features
(1)
(2)
Low forward voltage: V
F(3)
= 0.38 V (typ.)
Thin and compact packaging: Height = 0.40mm(max)
3. Packaging and Internal Circuit
1: Cathode
2: Anode
CST2B
25
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
)
Characteristics
Reverse voltage
Average rectified current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
R
I
O
I
FSM
T
j
T
stg
Note
(Note 1)
(Note 2)
Rating
30
500
3
125
-55 to 125
Unit
V
mA
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass-epoxy circuit board of 20 mm
×
20 mm, Pad dimension of 4 mm
×
4 mm.
Note 2: Measured with a 10 ms pulse.
Note:
Start of commercial production
1
2010-12
2014-02-24
Rev.5.0
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