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HRLO250N10K

Description
High Dense Cell Design
File Size247KB,7 Pages
ManufacturerSEMIHOW
Websitehttp://www.semihow.com/
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HRLO250N10K Overview

High Dense Cell Design

HRLO250N10K
Jan 2016
HRLO250N10K
100V N-Channel Trench MOSFET
Features
High Dense Cell Design
Reliable and Rugged
Advanced Trench Process Technology
Key Parameters
Parameter
BV
DSS
I
D
R
DS(on), typ @10V
R
DS(on), typ @4.5V
Value
100
7.9
20
22
Unit
V
A
Application
Power Management in Inverter System
Synchronous Rectification
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
P
D
T
J
, T
STG
T
A
=25
unless otherwise specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25
Drain Current
T
A
= 70
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
T
A
= 70
Operating and Storage Temperature Range
(Note 1)
(Note 2)
T
A
= 25
Value
100
20
7.9
6.3
32
96
3.1
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
Thermal Resistance Characteristics
Symbol
R
R
JL
Parameter
Junction-to-Lead
Junction-to-Ambient (t 10s)
Typ.
--
--
--
Max.
24
40
75
Units
/W
/W
/W
JA
Junction-to-Ambient (steady state)
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