INCHANGE Semiconductor
isc
Product Specification
isc
Thyristors
8P4M
APPLICATIONS
·Motor
speed control for household
appliance.
·Temperature
control for heater and
constant temperature box.
·Constant
voltage power source and
battery charger.
·Automotive
application such as regulator.
·Various
solid state relay etc.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
MIN
UNIT
V
DRM
V
RRM
I
T(AV)
I
TSM
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
Repetitive peak off-state voltage
Repetitive peak reverse voltage
On-state current
Surge non-repetitive on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate reverse voltage
Junction temperature
400
400
(note:R
GK
=1kΩ)
(note:R
GK
=1kΩ)
100
V
V
A
A
W
W
A
V
℃
8(Tc=90℃,θ=180°Single phase(1/2wave)
5 (f
≥50Hz,
Duty
≤10%)
0.5
2 (f
≥50Hz,
Duty
≤10%)
10
-40 to + 125
ELECTRICAL CHARACTERISTICS (T
C
=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
V
RM
=V
RRM
, Tj=125
℃
V
DM
=V
DRM
, Tj=125
℃
MIN
TYP.
MAX
UNIT
I
RRM
I
DRM
V
TM
I
GT
V
GT
V
GD
I
H
R
th(j-c)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate-trigger current
Gate-trigger voltage
Gate non-trigger voltage
Holding current
Thermal resistance
2
2
1.4
10
1.5
0.2
6
3
mA
mA
V
mA
V
V
mA
℃/W
I
TM
= 25A
V
DM
=6V; R
L
=100Ω
V
DM
=6V; R
L
=100Ω
V
DRM
=1/2V
DRM
, Tj=125
℃
V
D
=24V
Junction to case
isc website：www.iscsemi.cn
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