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SB150S

Description
1 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size139KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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SB150S Overview

1 A, 50 V, SILICON, SIGNAL DIODE

SB120S THRU SB1B0S
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 100 Volts
Forward Current -
1.0 Ampere
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0 utilizing
Flame retardant epoxy molding compound
1.0 ampere operation at T
L
=90 with no thermal runaway
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
Case:
Molded plastic, A-405
Terminals:
Axial leads, solderable per
MIL-STD-202, method 208
Polarity:
Color band denotes cathode
Mounting Position:
Any
Weight:
0.008 ounce, 0.22 gram
DIMENSIONS
DIM
A
B
C
D
inches
Min.
0.165
0.079
0.020
1.000
Max.
0.205
0.106
0.024
-
Min.
4.2
2.0
0.5
25.40
mm
Max.
5.2
2.7
0.6
-
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbols
SB
120S
SB
130S
SB
140S
SB
150S
SB
160S
SB
180S
SB
1B0S
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
L
=90
Peak forward surge current, I
FM
(surge):
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
Maximum forward voltage at 1.0A
Maximum full load reverse current, full cycle
average at T
A
=75
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=100
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R(AV)
I
R
C
J
R
JA
20
14
20
30
21
30
40
28
40
50
35
50
1.0
30.0
60
42
60
80
56
80
100
70
100
Volts
Volts
Volts
Amp
Amps
0.55
30.0
1.0
10.0
110.0
80.0
0.70
0.85
Volts
mA
mA
F
/W
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating and storage temperature range
Notes:
(1) Measured at 1.0MHz and applied reverse voltage of 4.0 VDC
(2) Thermal resistance junction to ambient
T
J
, T
STG
-50 to +125
1

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