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DB201S

Description
2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size67KB,2 Pages
ManufacturerYFWDIODE
Websitehttp://www.yfwdiode.com/
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DB201S Overview

2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

DB201S-DB207S
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 2.0 A
Features
Rating to 1000V PRV
Surge overload rating to 30 Amperes peak
6.3± 0.2
8.3± 0.3
1± 0.1
DB-S
7.9± 0.2
6.4± 0.1
0.3
1.2± 0.3
10± 0.6
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
8.3± 0.1
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
DB
201S
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
DB
202S
100
70
100
DB
203S
200
140
200
DB
204S
400
280
400
2.0
3.2± 0.2
Lead: silver plated copper, solderde plated
5± 0.2
Dimensions in millimeters
DB
205S
600
420
600
DB
206S
800
560
800
DB
207S
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at
2.0
A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
60
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
A
mA
Operating junction temperature range
Storage temperature range

DB201S Related Products

DB201S DB203S DB204S
Description 2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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