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SB10-09T

Description
1 A, 90 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size73KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SB10-09T Overview

1 A, 90 V, SILICON, SIGNAL DIODE

SB10-09T Parametric

Parameter NameAttribute value
package instructionR-PSIP-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current10 A
Number of components1
Number of terminals3
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
Maximum reverse recovery time0.02 µs
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Ordering number:EN4439A
SB10-09T
Schottky Barrier Diode
90V, 1A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1255A
[SB10-09T]
Features
· Low forward voltage (VF max=0.7V).
· Fast reverse recovery time (trr max=20ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
1:No Contact
2:Cathode
3:Anode
4:Cathode
SANYO:TP
trr Test Circuit
unit:mm
1256A
[SB10-09T]
1:No Contact
2:Cathode
3:Anode
4:Cathode
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
SANYO:TP-FA
Ratings
90
95
Unit
V
V
A
A
50Hz resistive load, Tc=120˚C
50Hz sine wave, 1 cycle
1
10
–55 to +125
–55 to +125
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance (Junction-Ambient)
Thermal Resistance (Junction-Case)
Symbol
VR
VF
IR
C
trr
Rth(j-a)
Rth(j-c)
IR=1mA
IF=1A
VR=45V
VR=10V, f=1MHz
IF=IR=100mA, See specifaied Test Circuit.
90
6
70
20
Conditons
Ratings
min
90
0.7
200
typ
max
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
43098HA (KT)/92793YH (KOTO) AX-8334 No.4439-1/3

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