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SB05-09

Description
0.5 A, 90 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size51KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SB05-09 Overview

0.5 A, 90 V, SILICON, SIGNAL DIODE

Ordering number :EN1925B
SB05-09
Shottky Barrier Diode
90V, 500mA Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1158
[SB05-09]
Features
· Low forward voltage (VF max=0.7V).
· Fast reverse recorvery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
EIAJ:SC-51
SANYO:MP
C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Ratings
–90
–95
Unit
V
V
mA
A
50Hz, resistive load, Ta=60˚C
50Hz sine wave, 1cycle
500
10
–55 to +125
–55 to +125
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recorvery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rthj-a
IR=–300µA
IF=500mA
VR=–45V
VR=–10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
110
34
10
Conditions
Ratings
min
–90
0.7
–80
typ
max
Unit
V
V
µA
pF
ns
˚C/W
trr Test Circuit
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/1129TA, TS No.1925-1/2

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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