UNISONIC TECHNOLOGIES CO., LTD
Preliminary
BSS139Z
0.2A, 50V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
BSS139Z
is an N-Channel power MOSFET, it uses
UTC’s advanced technology to provide customers with high
switching speed and low threshold voltage.
The UTC
BSS139Z
is suitable for battery-powered products,
power management in portable and DC to DC converters, etc.
Power MOSFET
FEATURES
* R
DS(ON)
=5.6Ω@V
GS
=5V,I
D
=200mA
* High switching speed
* Low threshold voltage (Min.=0.5V, Max.=1.5V)
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
BSS139ZL-AE2-R
BSS139ZG-AE2-R
SOT-23-3
Note: Pin Assignment: G: Gate D: Drain
S: Source
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
PIN CONFIGURATION
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QW-R502-862.b
BSS139Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
50
V
Gate-Source Voltage
V
GSS
±20
V
200
mA
Continuous
I
D
Drain Current
Pulsed
t
p
≤10µs
I
DM
800
mA
Power Dissipation
P
D
225
mW
Junction Temperature
T
J
-55~+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
556
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
Gate-Source Leakage Current
Static Drain-Source On-State Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=25V, V
GS
=0V
V
DS
=50V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=V
GS
, I
D
=1.0mA
V
GS
=2.75V, I
D
=200mA
V
GS
=5.0V, I
D
=200mA
MIN TYP MAX UNIT
50
0.1
0.5
+10
-10
0.5
5.6
1.5
10
3.5
50
25
5.0
20
20
V
µA
µA
µA
µA
V
Ω
Ω
pF
pF
pF
ns
ns
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS (Note 2)
Turn-ON Delay Time
t
D(ON)
V
DD
=30V, I
D
=0.2A
Turn-OFF Delay Time
t
D(OFF)
Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%.
2. Switching characteristics are independent of operating junction temperature.
40
12
3.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-862.b
BSS139Z
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-862.b
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