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BSS139ZG-AE2-R

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size129KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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BSS139ZG-AE2-R Overview

SMALL SIGNAL, FET

BSS139ZG-AE2-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
BSS139Z
0.2A, 50V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
BSS139Z
is an N-Channel power MOSFET, it uses
UTC’s advanced technology to provide customers with high
switching speed and low threshold voltage.
The UTC
BSS139Z
is suitable for battery-powered products,
power management in portable and DC to DC converters, etc.
Power MOSFET
FEATURES
* R
DS(ON)
=5.6Ω@V
GS
=5V,I
D
=200mA
* High switching speed
* Low threshold voltage (Min.=0.5V, Max.=1.5V)
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
BSS139ZL-AE2-R
BSS139ZG-AE2-R
SOT-23-3
Note: Pin Assignment: G: Gate D: Drain
S: Source
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
PIN CONFIGURATION
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-862.b

BSS139ZG-AE2-R Related Products

BSS139ZG-AE2-R BSS139ZL-AE2-R BSS139Z
Description SMALL SIGNAL, FET SMALL SIGNAL, FET SMALL SIGNAL, FET
Is it Rohs certified? conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Reach Compliance Code compli compli -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 50 V 50 V -
Maximum drain current (ID) 0.2 A 0.2 A -
Maximum drain-source on-resistance 10 Ω 10 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
Maximum feedback capacitance (Crss) 5 pF 5 pF -
JEDEC-95 code TO-236 TO-236 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 -
Number of terminals 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL -
surface mount YES YES -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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