UNISONIC TECHNOLOGIES CO., LTD
MJE13002
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The UTC
MJE13002
designed for use in high–volatge, high
speed,power switching in inductive circuit, It is particularly
suited for 115 and 220V switchmode applications such as
switching regulator’s,inverters, DC-DC converter, Motor
control, Solenoid/Relay drivers and deflection circuits.
NPN EPITAXIAL SILICON TRANSISTOR
FEATURES
*Collector-Emitter Sustaining Voltage:
V
CEO
(sus)=300V.
*Collector-Emitter Saturation Voltage:
V
CE(sat)
=1.0V(Max.) @I
C
=1.0A, I
B
=0.25A
*Switch Time- t
f
=0.7μs(Max.) @I
C
=1.0A.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13002L-x-T92-B
MJE13002G-x-T92-B
MJE13002L-x-T92-K
MJE13002G-x-T92-K
MJE13002L-x-T92-A-B
MJE13002G-x-T92-A-B
MJE13002L-x-T92-A-K
MJE13002G-x-T92-A-K
MJE13002L-x-T60-T
MJE13002G-x-T60-T
Package
TO-92
TO-92
TO-92
TO-92
TO-126
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
B
C
E
Packing
Tape Box
Bulk
Tape Box
Bulk
Tube
MARKING
TO-92
TO-126/TO-126C/TO-126S
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MJE13002
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Continuous
Collector Current
Peak (1)
Continuous
Base Current
Peak (1)
Continuous
Emitter Current
Peak (1)
TA=25°C
Derate above 25°C
Total Power Dissipation
TC=25°C
Derate above 25°C
Junction Temperature
Storage Temperature
NPN EPITAXIAL SILICON TRANSISTOR
SYMBOL
V
CEO(SUS)
V
CEV
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
T
J
T
STG
RATINGS
300
600
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
150
-65 to +150
UNIT
V
V
V
A
A
A
Watts
MW/°C
Watts
MW/°C
°C
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
TO-92
25
Junction to Case
θ
JC
°C/W
TO-126
3.12
TO-92
122
Junction to Ambient
θ
JA
°C/W
TO-126
89
Maximum Load Temperature for Soldering Purposes:
T
L
275
°C
1/8” from Case for 5 Seconds
Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most
circuits entirely from the information presented. SOA Limit curves – representing boundaries on device
characteristics – are given to facilitate “Worst case” design.
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QW-R204-014.D
MJE13002
PARAMETER
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current with
bass forward biased (See Figure 5)
Clamped Inductive SOA with base reverse
biased (See Figure 6)
DC Current Gain
SYMBOL
V
CEO(SUS)
I
CEV
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
TEST CONDITIONS
I
C
=10 mA , I
B
=0
V
CEV
=Rated Value, V
BE
(off)=1.5 V
V
CEV
=Rated Value,
V
BE
(off)=1.5V,Tc=100°C
MIN TYP MAX UNIT
300
1
5
I
S/
I
B
R
BSOA
h
FE1
h
FE2
V
CE(SAT)
I
C
=0.5 A, V
CE
=2 V
I
C
=1 A, V
CE
=2 V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=1A, I
B
=0.25A,T
C
=100°C
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25 A
I
C
=1A, I
B
=0.25A,T
C
=100°C
I
C
=100mA, V
CE
=10 V, f=1MHz
V
CB
=10V, I
E
=0, f=0.1MHz
V
CC
=125V, I
C
=1A,
I
B1
=I
B2
=0.2A, t
P
=25μs,
Duty Cycle≤1%
8
5
40
25
0.5
1
3
1
1
1.2
1.1
10
21
0.05
0.5
2
0.4
0.1
1
4
0.7
Collector-Emitter Saturation Voltage
V
Base-Emitter Saturation Voltage
V
BE(SAT)
V
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
f
T
Output Capacitance
Cob
SWITCHING CHARACTERISTICS (TABLE 1)
Delay Time
t
d
Rise Time
t
r
Storage Time
t
s
Fall Time
t
f
INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7)
Storage Time
t
sv
Crossover Time
t
c
Fall Time
t
fi
4
MHz
pF
μs
μs
μs
μs
μs
μs
μs
I
C
=1A,Vclamp=300V,
I
B1
=0.2A,V
BE
(off)=5V,T
C
=100°C
1.7
4
0.29 0.75
0.15
CLASSIFICATION OF h
FE1
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
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QW-R204-014.D
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APPLICATION INFORMATION
NPN EPITAXIAL SILICON TRANSISTOR
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
+5V
1N4933
0.001
µ
F
33
MJE210
pw 5V
DUTY CYCLE? 10%
t
r
,t
f
? 10ns
1K
68
33
1N4933
R
B
I
B
1K
2N2905
47
1/2W 100
MJE200
T.U.T.
I
C
Vclamp
R
B
TUT
Resistive
Switching
V
CC
L
MR826*
+125V
Rc
SCOPE
Test Circuits
2N2222
1K
+5V
5.1K
51
*SELECTED FOR? 1KV
V
CE
D1
-4.0V
1N4933
0.02
µ
F
NOTE
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
270
-V
BE
(off)
Coil Data :
GAP for 30 mH/2 A
V
CC
=20V
Ferroxcube core #6656
Lcoil=50mH
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
Output Waveforms
OUTPUT WAVEFORMS
I
C
t
f
CLAMPED
t
t1 Adjusted to
Obtain Ic
t1=
t2=
Lcoil(Icpk)
Vcc
Lcoil(Icpk)
Vclamp
Test Equipment
Scope-Tektronics
475 or Equivalent
V
CC
=125V
R
C
=125Ω
D1=1N5820 or
Equiv.
R
B
=47Ω
Circuit
Values
Test Waveforms
+10.3V
25μS
I
C
(pk)
t1
t
f
0
-8.5V
t
r
,t
f
<10ns
Duty Cycly=1.0%
R
B
and Rc adjusted
for desired I
B
and Ic
V
CE
V
CE
or
Vclamp
TIME
t2
t
Table 2. Typical Inductive Switching Performance
I
C
(AMP)
0.5
1
T
C
(°C)
25
100
25
100
25
100
T
SV
(μs)
1.3
1.6
1.5
1.7
1.8
3
T
RV
(μs)
0.23
0.26
0.10
0.13
0.07
0.08
T
FI
(μs)
0.30
0.30
0.14
0.26
0.10
0.22
T
TI
(μs)
0.35
0.40
0.05
0.06
0.05
0.08
T
C
(μs)
0.30
0.36
0.16
0.29
0.16
0.28
Fig 1. Inductive Switching Measurements
1.5
Note: All Data Recorded in the inductive Switching Circuit Table 1
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MJE13002
SWITCHING TIMES NOTE
NPN EPITAXIAL SILICON TRANSISTOR
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase, However, for inductive loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each wave form to determine the total switching time, For this reason, the following new terms have
been defined.
t
SV
=Voltage Storage Time, 90% IB1 to 10% Vclamp
t
RV
=Voltage Rise Time, 10-90% Vclamp
t
FI
=Current Fall Time, 90-10% I
C
t
TI
=Current Tail, 10-2% I
C
t
C
=Crossover Time, 10% Vclamp to 10% I
C
An enlarged portion of the inductive switching waveforms is shown in Figure 1 to aid in the visual identity of
these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN-222:
PSWT=1/2 VccIc (tc)f
In general, trv + tfi
≒
tc. However, at lower test currents this relationship may not be valid.
As is common with most switching transistor, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications
which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at
100°C.
RESISTIVE SWITCHING PERFORMANCE
Collector Current, I
C
(A)
2
1
0.7
0.5
10
7
Collector Current, I
C
(A)
5
3
2
t
R
Vcc=125V
Ic/I
B
=5
T
J
=25°C
Time, t (°C)
t
S
Vcc=125V
Ic/I
B
=5
T
J
=25°C
Time, t (°C)
0.3
0.2
td @ VBE(off)=5V
0.1
0.07
0.05
0.03
0.02
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
0
20
1
0.7
0.5
0.3
0.2
0.1
0.02 0.03
t
R
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1
2
Fig 2. Turn-On Time
Fig 3. Turn-Off Time
r(t),EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
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