SGA4186ZPCK1 datasheet, PDF - EEWORLD Datasheet

SGA4186ZDC

to 5000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

SGA4186Z

DC to 5000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

Package: SOT-86

Product Description

The SGA4186Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

ton configuration featuring one-micron emitters provides high F

T

and

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

12

Gain (dB)

Features



Broadband Operation: DC to

5000MHz

Cascadable 50Ω

Operates from Single Supply

Low Thermal Resistance

Package

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

Wireless Data, Satellite

Applications

Gain & Return Loss vs. Frequency

V

D

= 3.2 V, I

D

= 45 mA (Typ.)



16

0

-10

-20

IRL

ORL



SiGe BiCMOS

Si BiCMOS

GAIN

Return Loss (dB)

InGaP HBT



8

4

0

1

2

3

Frequency (GHz)

4

5



SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

-30

-40

T

L

=+25ºC

Parameter

Small Signal Gain

Min.

9.0

Specification

Typ.

10.0

9.2

8.9

14.6

12.4

28.3

25.5

5000

Max.

11.0

Unit

dB

dBm

MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

850MHz

1950MHz

>10dB

Condition

Output Power at 1dB Compression

Output Third Intercept Point

Bandwidth Determined by Return

Loss

Input Return Loss

20.3

dB

1950MHz

Output Return Loss

24.4

dB

1950MHz

Noise Figure

5.0

dB

1950MHz

Device Operating Voltage

2.9

3.2

3.5

V

Device Operating Current

41

45

49

mA

Thermal Resistance

97

°C/W

(Junction - Lead)

Test Conditions: V

S

=8V, I

D

=45mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=-5dBm, R

BIAS

=110Ω, T

L

=25°C, Z

S

=Z

L

=50Ω

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS100916

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SGA4186Z

Absolute Maximum Ratings

Parameter

Max Device Current (I

D

)

Max Device Voltage (V

D

)

Max RF Input Power

Max Junction Temp (T

J

)

Operating Temp Range (T

L

)

Max Storage Temp

Rating

90

5

+18

+150

-40 to +85

+150

Unit

mA

V

dBm

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l

Typical Performance at Key Operating Frequencies

Parameter

Unit

100

MHz

500

MHz

850

MHz

1950

MHz

2400

MHz

8.9

24.1

11.3

22.7

24.1

18.2

5.3

3500

MHz

8.1

Small Signal Gain

dB

10.5

10.4

10.0

9.2

Output Third Order Intercept Point

dBm

29.3

28.3

25.5

Output Power at 1dB Compression

dBm

13.6

14.6

12.4

Input Return Loss

dB

23.6

25.6

16.2

20.3

Output Return Loss

dB

15.6

20.4

14.8

24.4

Reverse Isolation

dB

15.8

16.0

16.5

17.9

Noise Figure

dB

4.6

4.7

5.0

Test Conditions: V

S

=8V, I

D

=45mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=-5dBm, R

BIAS

=110Ω, T

L

=25°C, Z

S

=Z

L

=50Ω

11.7

21.7

19.2

OIP

3

vs. Frequency

V

D

=3.2 V, I

D

= 45 mA (Typ.)

35

30

OIP

3

(dBm)

25

20

P

1dB

vs. Frequency

V

D

= 3.2 V, I

D

= 45 mA (Typ.)

18

15

P

1dB

(dBm)

12

9

T

L

=+25ºC

15

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

T

L

=+25ºC

6

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

Noise Figure vs. Frequency

V

D

= 3.2 V, I

D

= 45 mA (Typ.)

7

6

5

4

3

Noise Figure (dB)

T

L

=+25ºC

2

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

2 of 6

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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100916

SGA4186Z

Typical RF Performance Over Temperature (

Bias: V

D

= 3.2 V, I

D

= 45 mA (Typ.)

)

16

12

S

21

(dB)

8

4

|

S

21

|

vs. Frequency

0

-10

S

11

(dB)

-20

-30

|

S

11

|

vs. Frequency

T

L

0

1

2

3

Frequency (GHz)

4

+25°C

-40°C

+85°C

T

L

-40

5

0

1

2

3

Frequency (GHz)

4

+25°C

-40°C

+85°C

5

-10

-15

S

12

(dB)

-20

-25

|

S

12

|

vs. Frequency

0

-10

S

22

(dB)

|

S

22

|

vs. Frequency

-20

-30

T

L

-30

0

1

2

3

Frequency (GHz)

4

+25°C

-40°C

+85°C

T

L

-40

+25°C

-40°C

+85°C

5

0

1

2

3

Frequency (GHz)

4

5

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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SGA4186Z

1

2, 4

3

Function

RF IN

GND

RF OUT/BIAS

Description

RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of opera-

tion.

Connection to ground. For optimum RF performance use via holes as close to ground leads as possible to

reduce lead inductance.

RF output and bias pin. DC voltage is present on this pin, therefore a DC clocking capacitor is necessary for

proper operation.

Application Schematic

pp

Frequency (Mhz)

V

S

R

BIAS

1 uF

1000

pF

Reference

Designator

500

850

1950

2400

3500

C

B

C

D

220 pF

100 pF

68 nH

100 pF

68 pF

33 nH

68 pF

22 pF

22 nH

56 pF

22 pF

18 nH

39 pF

15 pF

15 nH

C

D

L

C

L

C

RF in

C

B

4

1

SGA4186Z

3

2

C

B

Recommended Bias Resistor Values for I

D

=45mA

R

BIAS

=( V

S

-V

D

) / I

D

RF out

Supply Voltage(V

S

)

R

BIAS

6V

62

8V

110

10 V

150

12 V

200

Note: R

BIAS

provides DC bias stability over temperature.

Evaluation Board Layout

V

S

R

BIAS

1000 pF

Mounting Instructions

1. Use a large ground pad area under device pins 2

and 4 with many plated through-holes as shown.

2. We recommend 1 or 2 ounce copper. Measurements

for this data sheet were made on a 31 mil thick FR-4

board with 1 ounce copper on both sides.

1 uF

L

C

D

C

B

A41

C

B

4 of 6

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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS100916

SGA4186Z

Suggested Pad Layout

Package Drawing

Dimensions in inches (millimeters)

Refer to drawing posted at www.rfmd.com for tolerances.

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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 6

Parameter Name	Attribute value
Maximum input power	18 dBm
Minimum operating frequency	0.0 MHz
Maximum operating frequency	5000 MHz
Minimum operating temperature	-40 Cel
Maximum operating temperature	85 Cel
Processing package description	HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN
each_compli	Yes
EU RoHS regulations	Yes
state	Active
Microwave RF Type	WIDE BAND LOW POWER
Impedance characteristics	50 ohm
structure	COMPONENT
Gain	9 dB
terminal coating	NOT SPECIFIED

	SGA4186ZPCK1	SGA4186ZSR	SGA4186Z	SGA4186ZSQ
Description	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0MHz - 5000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Minimum operating frequency	0.0 MHz	0.0 MHz	-	0.0 MHz
Maximum operating frequency	5000 MHz	5000 MHz	5000 MHz	5000 MHz
Minimum operating temperature	-40 Cel	-40 Cel	-40 °C	-40 Cel
Maximum operating temperature	85 Cel	85 Cel	85 °C	85 Cel
structure	COMPONENT	COMPONENT	COMPONENT	COMPONENT
Gain	9 dB	9 dB	9 dB	9 dB
Maximum input power	18 dBm	18 dBm	-	18 dBm
Processing package description	HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN	HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN	-	HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN
each_compli	Yes	Yes	-	Yes
EU RoHS regulations	Yes	Yes	-	Yes
state	Active	Active	-	Active
Microwave RF Type	WIDE BAND LOW POWER	WIDE BAND LOW POWER	-	WIDE BAND LOW POWER
Impedance characteristics	50 ohm	50 ohm	-	50 ohm
terminal coating	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED

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