SIHFBG30-E3 datasheet, PDF - EEWORLD Datasheet

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SIHFBG30-E3: Description3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size2MB，9 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHFBG30-E3 Overview

3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

SIHFBG30-E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	280 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (Abs) (ID)	3.1 A
Maximum drain current (ID)	3.1 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRFBG30, SiHFBG30

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

(Max.) (nC)

(nC)

Configuration

= 10 V

Single

FEATURES

1000

5.0

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Available

RoHS*

COMPLIANT

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

TO-220AB

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

TO-220AB

IRFBG30PbF

SiHFBG30-E3

IRFBG30

SiHFBG30

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery

dV/dt

for 10 s

6-32 or M3 screw

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

= 25 °C

dV/dt

, T

stg

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

1000

± 20

3.1

2.0

1.0

280

3.1

125

1.0

- 55 to + 150

300

1.1

W/°C

V/ns

°C

lbf · in

N·m

UNIT

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 55 mH, R

= 25

Ω,

= 3.1 A (see fig. 12).

c. I

≤

3.1 A, dI/dt

≤

80 A/μs, V

≤

600, T

≤

150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91124

S11-0517-Rev. B, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHFBG30-E3 Related Products

	SIHFBG30-E3	SIHFBG30	IRFBG30PBF
Description	3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	Drain-source voltage (Vdss): 1000V Continuous drain current (Id) (at 25°C): 3.1A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 5Ω @ 1.9A, 10V Maximum power dissipation ( Ta=25°C): 125W Type: N channel N channel, 1000V, 3.1A, 5Ω@10V
Is it lead-free?	Lead free	Contains lead	Lead free
Is it Rohs certified?	conform to	incompatible	conform to
Parts packaging code	TO-220AB	TO-220AB	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	not_compliant
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	280 mJ	280 mJ	280 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V	1000 V	1000 V
Maximum drain current (Abs) (ID)	3.1 A	3.1 A	3.1 A
Maximum drain current (ID)	3.1 A	3.1 A	3.1 A
Maximum drain-source on-resistance	5 Ω	5 Ω	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e0	e3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	125 W	125 W	125 W
Maximum pulsed drain current (IDM)	12 A	12 A	12 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	30
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	Vishay	Vishay	-

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