RF COMMUNICATIONS PRODUCTS
SA636
Low voltage high performance mixer FM
IF system with high-speed RSSI
Product specification
Replaces data of 1994 Jun 16
IC17 Data Handbook
1997 Nov 07
Philips Semiconductors
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF
system with high-speed RSSI
SA636
DESCRIPTION
The SA636 is a low-voltage high performance monolithic FM IF
system with high-speed RSSI incorporating a mixer/oscillator, two
limiting intermediate frequency amplifiers, quadrature detector,
logarithmic received signal strength indicator (RSSI), voltage
regulator, wideband data output and fast RSSI op amps. The
SA636 is available in 20-lead SSOP (shrink small outline package).
The SA636 was designed for high bandwidth portable
communication applications and will function down to 2.7V. The RF
section is similar to the famous SA605. The data output has a
minimum bandwidth of 600kHz. This is designed to demodulate
wideband data. The RSSI output is amplified. The RSSI output has
access to the feedback pin. This enables the designer to adjust the
level of the outputs or add filtering.
SA636 incorporates a power down mode which powers down the
device when Pin 8 is low. Power down logic levels are CMOS and
TTL compatible with high input impedance.
PIN CONFIGURATION
DK Package
RF
IN
RF BYPASS
XTAL OSC
(EMITTER)
(BASE)
V
CC
RSSI FEEDBACK
RSSI
OUT
POWER DOWN CONTROL
DATA OUT
QUADRATURE IN
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
MIXER OUT
IF AMP DECOUPLING
IF AMP IN
IF AMP DECOUPLING
IF AMP OUT
GND
LIMITER IN
LIMITER DECOUPLING
LIMITER DECOUPLING
LIMITER OUT
XTAL OSC
APPLICATIONS
•
DECT (Digital European Cordless Telephone)
•
Digital cordless telephones
•
Digital cellular telephones
•
Portable high performance communications receivers
•
Single conversion VHF/UHF receivers
•
FSK and ASK data receivers
•
Wireless LANs
FEATURES
SR00491
Figure 1. Pin Configuration
•
XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local
oscillator can be injected)
•
92dB of IF Amp/Limiter gain
•
25MHz limiter small signal bandwidth
•
Temperature compensated logarithmic Received Signal Strength
Indicator (RSSI) with a dynamic range in excess of 90dB
•
Wideband data output (600kHz min.)
•
Fast RSSI rise and fall times
•
Low power consumption: 6.5mA typ at 3V
•
Mixer input to >500MHz
•
Mixer conversion power gain of 11dB at 240MHz
•
Mixer noise figure of 12dB at 240MHz
•
RSSI output internal op amp
•
Internal op amps with rail-to-rail outputs
•
Low external component count; suitable for crystal/ceramic/LC
filters
•
Excellent sensitivity:
0.54µV into 50Ω matching network for 12dB
SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF
at 240MHz and IF at 10.7MHz
•
ESD hardened
•
10.7MHz filter matching (330Ω)
•
Power down mode (I
CC
= 200µA)
ORDERING INFORMATION
DESCRIPTION
20-Pin Plastic Shrink Small Outline Package (Surface-mount)
TEMPERATURE RANGE
-40 to +85°C
ORDER CODE
SA636DK
DWG #
SOT266-1
1997 Nov 07
2
853-1757 18664
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
BLOCK DIAGRAM
20
19
18
17
16
15
14
13
12
11
IF
AMP
MIXER
GND
LIMITER
OSCILLATOR
FAST
RSSI
QUAD
V
CC
E
B
RSSI
– +
PWR
DWN
– +
AUDIO
1
2
3
4
5
6
7
8
9
10
SR00492
Figure 2. Block Diagram
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
V
IN
T
STG
T
A
Single supply voltage
Voltage applied to any other pin
Storage temperature range
Operating ambient temperature range SA636
DK package
117
°
C/W
PARAMETER
RATING
0.3 to 7
–0.3 to (V
CC
+0.3)
-65 to +150
–40 to +85
UNITS
V
V
°
C
°
C
NOTE:
θ
JA
, Thermal impedance
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3V, T
A
= 25
°
C; unless otherwise stated.
LIMITS
SYMBOL
V
CC
I
CC
PARAMETER
Power supply voltage range
DC current drain
Input current
Input level
I
CC
t
ON
t
OFF
Standby
Power up time
Power down time
Pin 8 = HIGH
Pin 8 LOW
Pin 8 HIGH
Pin 8 LOW
Pin 8 HIGH
Pin 8 = LOW
RSSI valid (10% to 90%)
RSSI invalid (90% to 10%)
TEST CONDITIONS
MIN
2.7
5.5
–10
–10
0
0.7V
CC
0.2
10
5
SA636
TYP
3.0
6.5
MAX
5.5
7.5
10
10
0.3V
CC
V
CC
0.5
V
mA
µA
V
mA
µs
µs
UNITS
1997 Nov 07
3
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
-45dBm; FM modulation = 1kHz with
±125kHz
peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test
circuit Figure 1. The parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The
limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
Mixer/Osc section (ext LO = 160mV
RMS
)
f
IN
f
OSC
Input signal frequency
External oscillator (buffer)
Noise figure at 240MHz
Third-order input intercept point
Conversion power gain
RF input resistance
RF input capacitance
Mixer output resistance
IF section
IF amp gain
Limiter gain
Input limiting -3dB
AM rejection
Data level
3dB data bandwidth
SINAD sensitivity
THD
S/N
Total harmonic distortion
Signal-to-noise ratio
IF RSSI output with buffer
IF RSSI output rise time
(10kHz pulse, no 10.7MHz filter)
(no RSSI bypass capacitor)
IF RSSI output fall time
(10kHz pulse, no 10.7MHz filter)
(no RSSI bypass capacitor)
RSSI range
RSSI accuracy
IF input impedance
IF output impedance
Limiter input impedance
Limiter output impedance
Limiter output level with no load
RF/IF section (int LO)
System RSSI output
System SINAD
RF level = -10dBm
RF level = -106dBm
1.4
12
V
dB
No modulation for noise
IF level = -118dBm
IF level = -68dBm
IF level = -10dBm
IF frequency = 10.7MHz
RF level = -56dBm
RF level = -28dBm
IF frequency = 10.7MHz
RF level = -56dBm
RF level = -28dBm
2.0
7.3
90
+1.5
330
330
330
300
130
µs
µs
dB
dB
Ω
Ω
Ω
Ω
mV
RMS
1.2
1.1
µs
µs
0.3
0.9
RF level = -111dBm
330Ω load
330Ω load
Test at Pin 18
80% AM 1kHz
R
LOAD
= 100kΩ
120
600
38
54
–105
50
130
700
16
-43
60
0.2
0.6
1.3
0.5
1.0
1.8
-38
dB
dB
dBm
dB
mV
RMS
kHz
dB
dB
dB
V
V
V
(Pin 20)
Matched f1=240.05; f2=240.35MHz
Matched 14.5dBV step-up
Single-ended input
8
500
500
12
-16
11
700
3.5
330
14
MHz
MHz
dB
dBm
dB
Ω
pF
Ω
SA636
TYP
MAX
UNITS
AC ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C; V
CC
= +3V, unless otherwise stated. RF frequency = 240.05MHz + 14.5dBV RF input step-up; IF frequency = 10.7MHz; RF level =
1997 Nov 07
4
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system
with high-speed RSSI
SA636
PERFORMANCE CHARACTERISTICS
9.0
8.5
8.0
7.5
7.0
6.5
V
CC
= 2.7V
6.0
5.5
5.0
–50 –40 –30 –20 –10 0 10 20 30 40
TEMPERATURE (°C)
V
CC
= 3V
V
CC
= 5V
0.50
0.45
POWER DOWN SUPPLY CURRENT (mA)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100
TEMPERATURE (°C)
V
CC
= 2.7V
V
CC
= 3V
SUPPLY CURRENT (mA)
V
CC
= 5V
50
60
70 80 90
Supply Current vs Temperature and Supply Voltage
20
19
18
17
16
MIXER GAIN
(dB)
15
14
13
12
11
10
9
8
7
6
5
–40
0
25
Temperature (°C)
70
85
2.7V
3.0V
5.5V
RF level = -45 dBm
Power Down Supply Current vs Temperature and Supply Voltage
–5
–7
RF level = -45 dBm
–9
MIXER IIP3 (deB)
–11
–13
–15
5.5V
2.7V
3.0V
–17
–19
–21
–23
–25
–40
0
25
Temperature (°C)
70
85
Mixer Power Gain vs Temperature and Supply Voltage
300
Mixer IIP3 at 240MHz vs Temperature and Supply Voltage
20
AUDIO
0
250
AUDIO REFERENCE (mVrms)
5.5V
200
AUDIO (dB)
3.0V
150
2.7V
–40
DISTORTION
–60
NOISE
–20
AM REJECTION
100
–80
50
–100
12dB SINAD
0
–40
0
25
Temperature (°C)
70
85
–120
–50 –40 –30 –20 –10 0 10 20 30 40 50
TEMPERATURE (°C)
60
70 80 90
Audio Reference Level vs Temperature and Supply Voltage
12dB SINAD and Relative Audio, THD, Noise
and AM Rejection for VCC = 3V vs Temperature
RF = 240MHz, Level = –68dBm, Deviation = 125kHz
SR00493
Figure 3. Performance Characteristics
1997 Nov 07
5
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