BLF8G27LS-100
Power LDMOS transistor
Rev. 2 — 5 March 2014
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2500 to 2700
I
Dq
(mA)
900
V
DS
(V)
28
P
L(AV)
(W)
25
G
p
(dB)
17
D
(%)
28
ACPR
5M
(dBc)
32
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
NXP Semiconductors
BLF8G27LS-100
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G27LS-100
-
earless flanged ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 100 W
Typ
Unit
0.292 K/W
BLF8G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 5 March 2014
2 of 12
NXP Semiconductors
BLF8G27LS-100
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 1 mA
V
DS
= 10 V; I
D
= 153 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 153 mA
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.35 A
Min
65
1.5
-
-
-
-
-
Typ
-
1.9
-
29
-
1.27
0.1
Max Unit
-
2.3
4.2
-
420
-
-
V
V
A
A
nA
S
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability
on the CCDF; f
1
= 2502.5 MHz; f
2
= 2507.5 MHz; f
3
= 2692.5 MHz; f
4
= 2697.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 900 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
G
p
D
RL
in
ACPR
5M
Parameter
power gain
drain efficiency
input return loss
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
Min
15.8
23
-
-
Typ Max
17
28
12
32
-
-
8
27
Unit
dB
%
dB
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G27LS-100 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 900 mA; P
L
= 100 W (CW); f = 2500 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data; V
DS
= 28 V; I
Dq
= 900 mA.
f
(MHz)
2500
2600
2700
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
1.2
j4.6
2.3
j5.5
3.8
j5.2
Z
L[1]
()
2.7
j2.7
2.5
j2.5
2.1
j2.6
BLF8G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 5 March 2014
3 of 12
NXP Semiconductors
BLF8G27LS-100
Power LDMOS transistor
Fig 1.
Definition of transistor impedance
7.3 Test circuit information
See
Table 9
for list of components.
Fig 2.
Component layout for test circuit
Table 9.
List of components
See
Figure 2
for component layout.
The used PCB (Printed-Circuit Board) material is Rogers RO4350B with a thickness of 0.762 mm.
Component
C1, C2, C3, C6, C7, C10,
C11, C12
C4, C5, C8, C9, C13,
C14, C15, C16
C17, C18
R1
X1
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
copper foil strip
Value
22 pF
4.7
F,
50 V
2200
F;
50 V
9.1
-
SMD 0603
Remarks
ATC600F
Murata
BLF8G27LS-100
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 5 March 2014
4 of 12
NXP Semiconductors
BLF8G27LS-100
Power LDMOS transistor
7.4 Graphical data
7.4.1 CW
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 3.
Power gain and drain efficiency as function of output power; typical values
7.4.2 CW pulsed
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 4.
BLF8G27LS-100
Power gain and drain efficiency as function of output power; typical values
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 5 March 2014
5 of 12
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