Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
DESCRIPTION
The NE/SA5222 is a low-power, wide-band, low noise
transimpedance amplifier with differential outputs, optimized for
signal recovery in FDDI fiber optic receivers. The part is also suited
for many other RF and fiber optic applications as a general purpose
gain block.
PIN DESCRIPTION
D Package
V
CC1
GND
1
1
2
3
4
8
7
6
5
V
CC2
OUT
OUT
GND
2
FEATURES
•
Extremely low noise: 2.0pA Hz
•
Single 5V supply
•
Low supply current: 9mA
•
Large bandwidth: 165MHz
•
Differential outputs
•
Low output offset
•
Low input/output impedances
•
High power-supply-rejection ratio: 55dB
•
Tight transresistance control
•
High input overload: 115µA
•
ESD protected
IN
GND
1
SD00360
Figure 1. Pin Configuration
APPLICATIONS
•
FDDI preamp
•
Current-to-voltage converters
•
Wide-band gain block
•
Medical and scientific instrumentation
•
Sensor preamplifiers
•
Single-ended to differential conversion
•
Low noise RF amplifiers
•
RF signal processing
TEMPERATURE RANGE
-40 to +85
°
C
ORDER CODE
SA5222D
DWG #
SOT96-1
ORDERING INFORMATION
DESCRIPTION
8-Pin Plastic Small Outline (SO) package
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC1,2
T
A
T
J
T
STG
P
D
I
INMAX
Power supply voltage
Ambient temperature range
Junction temperature range
Storage temperature range
Power dissipation T
A
= 25
o
C (still air)
1
Maximum input current
PARAMETER
RATING
6
-40 to +85
-55 to +150
-65 to +150
0.78
5
UNITS
V
°
C
°
C
°
C
W
mA
NOTE:
1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance
θ
JA
= 158
o
C/W. Derate
6.2mW/
°
C above 25
°
C.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC1,2
T
A
T
J
Power supply voltage
Ambient temperature range: SA grade
Junction temperature range: SA grade
PARAMETER
RATING
4.5 to 5.5
-40 to +85
-40 to +105
UNITS
V
°
C
°
C
1995 Apr 26
1
853-1582 15170
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T
A
= 25
°
C, and V
CC1
= V
CC2
= +5V, unless otherwise specified.
SYMBOL
V
IN
V
O±
V
OS
I
CC
I
OMAX
I
IN
I
INMAX
V
OMAX
PARAMETER
Input bias voltage
Output bias voltage
Output offset voltage
Supply current
Output sink/source current
Input current (2% linearity)
Maximum input current overload threshold
Maximum differential output voltage swing
Test circuit 5, Procedure 2
Test circuit 5, Procedure 4
R
L
=
∞,
Test Circuit 5, Procedure 3
6
1.5
±60
±80
TEST CONDITIONS
SA5222
Min
1.3
2.9
Typ
1.55
3.2
0
9
2
±90
±115
3.6
Max
1.8
3.5
±100
12
UNIT
V
V
mV
mA
mA
µA
µA
V
P-P
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at T
A
= 25
°
C and V
CC1
= V
CC2
=+5V, unless otherwise specified.
SYMBOL
R
T
R
O
R
T
R
O
f
3dB
R
IN
C
IN
∆R/∆V
∆R/∆T
I
IN
PARAMETER
Transresistance (differential output)
Output resistance
(differential output)
Transresistance
(single-ended output)
Output resistance
(single-ended output)
Bandwidth (-3dB)
1
Input resistance
Input capacitance
2
Transresistance power supply sensitivity
Transresistance ambient temperature sensi-
tivity
RMS noise current spectral density (referred
to input)
Integrated RMS noise current over the band-
width (referred to input)
C
S
= 0pF
I
T
C
S
= 1pF
V
CC1
= V
CC2
= 5
±0.5V
∆T
A
= T
A MAX
- T
A MIN
Test Circuit 2, f = 10MHz
Test circuit 2,
∆f
= 50MHz
∆f
= 100MHz
∆f
= 150MHz
∆f
= 50MHz
∆f
= 100MHz
∆f
= 150MHz
PSRR
PSRR
I
INMAX
t
r
, t
f
t
D
Power supply rejection ratio
Power supply rejection ratio
3
Maximum input amplitude for output duty
cycle of 50
±5%
4
Rise and fall times
Group delay
DC Tested,
∆V
CC
=
±0.5V
f = 1.0MHz, Test Circuit 3
Test circuit 4
10 – 90%
f = 10MHz
TEST CONDITIONS
DC tested, R
L
=
∞,
Test Circuit 5,
Procedure 1
DC tested
DC tested, R
L
=
∞
DC tested
Test Circuit 1
SA5222
Min
13.3
30
6.65
15
110
Typ
16.6
60
8.3
30
140
150
1
1.0
0.07
2.0
15
25
36
17
35
55
–55
–34
±120
2.2
2.2
dB
dB
µA
ns
ns
nA
Max
19.9
90
9.95
45
UNIT
kΩ
Ω
kΩ
Ω
MHz
Ω
pF
%/V
%/
o
C
pA
Hz
NOTES:
1. Bandwidth is tested into 50Ω load. Bandwidth into 1kΩ load is approximately 165MHz.
2. Does not include Miller-multiplied capacitance of input device.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in V
CC
line.
4. Monitored in production via linearity and over load tests.
1995 Apr 26
2
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
TEST CIRCUITS
SINGLE-ENDED
V
R
T
+
OUT
R
+
V IN
1 + S22
1 - S22
2
@
S 21
@
R
R
DIFFERENTIAL
V
T
+
OUT
R
+
V IN
1 + S22
R
O
= 2Z
O
1 - S22
4
@
S 21
@
R
SPECTRUM ANALYZER
-40
50Ω
R
O
= Z
O
-20
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1
Z
O
= 50Ω
0.1uF
R=1k
50
GND
1
V
CC
20
OUT
IN DUT
OUT
20
GND
2
.1uF
C
S
.1uF
GND
1
PORT2
Z
O
= 50Ω
V
CC
20
OUT
IN DUT
OUT
20
GND
2
.1µF
.1µF
NE5209
10µF
50Ω
10µF
50
Test Circuit 1: Bandwidth
Figure 2. Test Circuit1
SD00361
Test Circuit 2: Noise
Figure 3. Test Circuit2
SD00362
TEST CIRCUITS
(continued)
5V
BIAS TEE
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1
50Ω
0.1uF
V
CC
20Ω
.1uF
.1uF
NHO300HB
50Ω
UNBAL.
CAL
TRANSFORMER
CONVERSION
LOSS = 9dB
PORT2
NC
GND
1
OUT
IN DUT 20Ω
OUT
GND
2
100Ω
BAL.
Test Circuit 3: PSRR
Figure 4. Test Circuit4
SD00363
1995 Apr 26
3
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
TEST CIRCUITS
(continued)
5V
PULSE GEN
OFFSET
0.1uF
IN
1kΩ
50Ω
GND
1
OUT
GND
2
DUT
1kΩ
.1µF
B
Z
O
= 50Ω
1kΩ
OUT
.1µF
A
Z
O
= 50Ω
OSCILLOSCOPE
Meaurement done using
differential wave forms
Test Circuit 4: Duty Cycle Distortion
Figure 5. Test Circuit4
SD00364
TEST CIRCUITS
(continued)
5V
OUT +
+
V
O
(VOLTS)
OUT –
I
IN (µA)
GND
1
GND
2
–
Typical V
O
(Differential) vs I
IN
2.25
1.80
DIFFERENTIAL OUTPUT VOLTAGE (V)
1.35
V
O
0.90
V
O1
0.45
0.00
V
O2
–0.45
V
O4
–0.90
–1.35
–1.80
–2.25
–200
V
O8
V
O6
V
O
V
O
V
O
7
5
3
S
–160
–120
–80
–40
0
40
80
120
160
200
CURRENT INPUT (µA)
SA5222 TEST CONDITIONS
Procedure 1 R
T
measured at 30µA
R
T
= (V
O1
- V
O2
) / (+30µA - (-30µA)
Where:
V
O1
Measure at I
IN
= +30µA
V
O2
Measured at I
IN
= -30µA
Procedure 2 Linearity = 1 - ABS((V
OA
- V
OB
/ (V
O3
- V
O4
))
Where:
V
O3
Measured at I
IN
= +60µA
V
O4
Measured at I
IN
= -60µA
V
OA
= R
T
x (+60µA) + V
OS
V
OB
= R
T
x (-60µA) + V
OS
Procedure 4 I
INMAX
Test Pass Conditions:
V
O7
- V
O5
> 50mV and V
O6
- V
O8
< 50mV
Where:
V
O5
Measured at I
IN
= +80µA
V
O6
Measured at I
IN
= -80µA
V
O7
Measured at I
IN
= +130µA
V
OB
Measured at I
IN
= -130µA
Procedure 3 V
OMAX
= V
O7
- V
O8
Where:
V
O7
Measured at I
IN
= +130µA
V
O8
Measured at I
IN
= -130µA
Test Circuit 5: DC Tests
Figure 6. Test Circuit5
SD00365
1995 Apr 26
4
Philips Semiconductors
Product specification
Low-power FDDI transimpedance amplifier
SA5222
10
5
OUT
SUPPLY CURRENT (mA)
9
25°C
85°C
VOLTAGE (V)
–40°C
4
3
OUT
2
8
7
1
T
A
= +25°C
V
CC
= 5V
6
4.5
5
SUPPLY VOLTAGE (V)
5.5
0
–200
–100
0
100
INPUT CURRENT (µA)
200
SD00548
SD00366
Figure 7. I
CC
vs. V
CC
and Temperature
1.8
–40°C
1.7
Figure 10. Differential Output Voltages vs. Input Current
2.5
1.5
INPUT VOLTAGE (V)
VOLTAGE (V)
1.6
25°C
1.5
85°C
1.4
0.5
–0.5
–1.5
1.3
4.5V
5.5V
T
A
= +25°C
1.2
4.5
5
SUPPLY VOLTAGE (V)
5.5
–2.5
–200
–100
0
INPUT CURRENT (µA)
100
200
SD00549
SD00546
Figure 8. Input Voltage vs. V
CC
and Temperature
3.8
3.6
Figure 11. Differential Output Voltage vs Input Current and V
CC
2.5
1.5
3.4
OUTPUT VOLTAGE (V)
85°C
25°C
3
–40°C
2.8
2.6
2.4
2.2
PIN 6 OUTPUT
2
4.5
5
SUPPLY VOLTAGE (V)
5.5
–2.5
–200
–100
–1.5
VOLTAGE (V)
3.2
0.5
85°C
–40°C
–0.5
V
CC
= 5V
SD00547
0
100
INPUT CURRENT (µA)
200
SD00550
Figure 9. Output Voltage vs. V
CC
and Temperature
Figure 12. Diff. Output Voltage vs. Input Current and Temp.
1995 Apr 26
5
京公网安备 11010802033920号
EEWORLD
