DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
PMEM4010ND
NPN transistor/Schottky diode
module
Product data sheet
Supersedes data of 2002 Oct 28
2003 Jul 04
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
FEATURES
•
600 mW total power dissipation
•
High current capability
•
Reduces required PCB area
•
Reduced pick and place costs
•
Small plastic SMD package.
Transistor:
•
Low collector-emitter saturation voltage.
Diode:
•
Ultra high-speed switching
•
Very low forward voltage
•
Guard ring protected.
handbook, halfpage
6
PMEM4010ND
PINNING
PIN
1
2
3
4
5
6
emitter
not connected
cathode
anode
base
collector
DESCRIPTION
5
4
4
3
6
APPLICATIONS
•
DC/DC convertors
•
Inductive load drivers
•
General purpose load drivers
•
Reverse polarity protection circuits.
DESCRIPTION
Combination of an NPN transistor with low V
CEsat
and high
current capability and a planar Schottky barrier diode with
an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package.
PNP complement: PMEM4010PD.
Marking code:
B3.
5
1
1
2
3
MGU865
Fig.1 Simplified outline (SOT457) and symbol.
2003 Jul 04
2
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
NPN transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
T
j
V
R
I
F
I
FSM
T
j
P
tot
T
stg
T
amb
Notes
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
junction temperature
open emitter
open base
open collector
−
−
−
−
−
−
−
−
−
t = 8.3 ms half sinewave;
JEDEC method
−
−
T
amb
≤
25
°C;
note 1
note 2
−
−65
−65
PARAMETER
CONDITIONS
MIN.
PMEM4010ND
MAX.
UNIT
40
40
5
1
2
1
150
V
V
V
A
A
A
°C
Schottky barrier diode
continuous reverse voltage
continuous forward current
non repetitive peak forward current
junction temperature
20
1
5
125
V
A
A
°C
Combined device
total power dissipation
storage temperature
operating ambient temperature
600
+150
+125
mW
°C
°C
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses
P
R
are significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F
(AV) rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
VALUE
208
UNIT
K/W
2003 Jul 04
3
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
NPN transistor
I
CBO
I
CEO
I
EBO
h
FE
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
V
CB
= 40 V; I
E
= 0
V
CB
= 40 V; I
E
= 0; T
amb
= 150
°C
V
CE
= 30 V; I
B
= 0
V
EB
= 5 V; I
C
= 0
V
CE
= 5 V; I
C
= 1 mA
V
CE
= 5 V; I
C
= 500 mA
V
CE
= 5 V; I
C
= 1 A
V
CEsat
collector-emitter saturation voltage
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
V
BEsat
R
CEsat
V
BEon
f
T
C
c
V
F
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
= 1 A; I
B
= 100 mA
I
C
= 500 mA; I
B
= 50 mA; note 1
V
CE
= 5 V; I
C
= 1 A
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz
V
CB
= 10 V; I
E
= I
e
=0 ; f = 1 MHz
I
F
= 10 mA; note 1
I
F
= 100 mA; note 1
I
F
= 1000 mA; see Fig.7; note 1
I
R
reverse current
V
R
= 5 V; note 1
V
R
= 8 V; note 1
V
R
= 15 V; see Fig.8; note 1
C
d
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
diode capacitance
V
R
= 5 V; f = 1 MHz; see Fig.9
−
−
−
−
300
300
200
−
−
−
−
−
−
150
−
−
−
−
−
−
−
−
PARAMETER
CONDITIONS
MIN.
PMEM4010ND
TYP.
−
−
−
−
−
−
−
−
−
−
−
260
−
−
−
MAX.
UNIT
100
50
100
100
−
900
−
80
110
210
1.2
<220
1.1
−
10
nA
µA
nA
nA
mV
mV
mV
V
mΩ
V
MHz
pF
Schottky barrier diode
continuous forward voltage
240
300
480
5
7
10
19
270
350
550
10
20
50
25
mV
mV
mV
µA
µA
µA
pF
2003 Jul 04
4
NXP Semiconductors
Product data sheet
NPN transistor/Schottky diode module
GRAPHICAL DATA
MHC077
PMEM4010ND
handbook, halfpage
1000
handbook, halfpage
10
MHC078
hFE
(1)
800
VBE
(V)
600
(2)
1
400
(3)
(1)
(2)
(3)
200
0
10
−1
1
10
10
2
10
3
10
4
10
−1
10
−1
1
10
10
2
IC (mA)
NPN transistor;
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
NPN transistor;
V
CE
= 5 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
10
3
10
4
IC (mA)
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
handbook, halfpage
10
3
MHC079
handbook, halfpage
10
2
MHC080
VCEsat
(mV)
RCEsat
(Ω)
10
2
(1)
10
(2)
(3)
10
1
(1)
(2)
(3)
1
1
10
10
2
10
3
IC (mA)
10
4
10
−1
10
−1
1
10
10
2
10
3
10
4
IC (mA)
NPN transistor;
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
NPN transistor;
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Equivalent on-resistance as a function of
collector current; typical values.
2003 Jul 04
5
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