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PMEG4030ER

Description
3 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size83KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMEG4030ER Overview

3 A, SILICON, RECTIFIER DIODE

PMEG4030ER Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknow
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.57 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfacePure Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
PMEG4030ER
3 A low V
F
MEGA Schottky barrier rectifier
Rev. 01 — 11 August 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
I
Average forward current: I
F(AV)
3 A
Reverse voltage: V
R
40 V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
I
F(AV)
Parameter
average forward current
Conditions
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
40
°C
T
sp
130
°C
V
R
V
F
I
R
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
460
25
3
3
40
540
100
A
A
V
mV
µA
reverse voltage
forward voltage
reverse current
I
F
= 3 A
V
R
= 40 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.

PMEG4030ER Related Products

PMEG4030ER PMEG4030ER,115
Description 3 A, SILICON, RECTIFIER DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to
Maker NXP NXP
package instruction R-PDSO-F2 R-PDSO-F2
Contacts 2 2
Reach Compliance Code unknow _compli
application EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-F2 R-PDSO-F2
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 50 A 50 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Maximum output current 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.57 W 0.57 W
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Pure Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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