PMBT2222A datasheet, PDF - EEWORLD Datasheet

PMBT2222A: Description600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size64KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PMBT2222A Overview

600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH CURRENT DRIVER
Maximum collector current (IC)	0.6 A
Collector-based maximum capacity	8 pF
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
Guideline	AEC-Q101; IEC-60134
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Maximum off time (toff)	250 ns
Maximum opening time (tons)	35 ns
VCEsat-Max	1 V

DISCRETE SEMICONDUCTORS

DATA SHEET

PMBT2222; PMBT2222A

NPN switching transistors

Product data sheet

Supersedes data of 1999 Apr 27

2004 Jan 22

	PMBT2222A	PMBT2222
Description	600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
Parts packaging code	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3
Reach Compliance Code	compli	compliant
ECCN code	EAR99	EAR99
Other features	HIGH CURRENT DRIVER	HIGH CURRENT DRIVER
Maximum collector current (IC)	0.6 A	0.6 A
Collector-based maximum capacity	8 pF	8 pF
Collector-emitter maximum voltage	40 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	30
JEDEC-95 code	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	0.25 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	250 MHz
Maximum off time (toff)	250 ns	250 ns
Maximum opening time (tons)	35 ns	35 ns
VCEsat-Max	1 V	1.6 V

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