V23990-K230-F40-PM
datasheet
MiniSKiiP PACK 2
Features
● Solder less interconnection
● Designed for motor drives up to 7 kW
● Temperature sensor
● Standard (6.5mm) and thin (2.8mm) lids, 16mm housing
● Optional with pre-applied thermal grease
1200 V / 70 A
MiniSkiip 2 housing
Schematic
Target applications
● Servo Drives
● Industrial Motor Drives
● UPS
Types
● V23990-K230-F40-PM
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
Collector-emitter voltage
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
Short circuit ratings
Maximum junction temperature
V
CES
I
C
I
CRM
P
tot
V
GES
t
SC
T
jmax
V
GE
= 15 V
Vcc = 800 V
T
j
= 150 °C
T
j
=
T
jmax
t
p
limited by
T
jmax
T
j
=
T
jmax
T
s
= 80 °C
T
s
= 80 °C
1200
88
210
246
±20
10
175
V
A
A
W
V
µs
°C
Copyright Vincotech
1
01 Mar. 2019/ Revision 4
V23990-K230-F40-PM
datasheet
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak repetitive reverse voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Total power dissipation
Maximum junction temperature
V
RRM
I
F
I
FSM
I
2
t
P
tot
T
jmax
T
j
=
T
jmax
T
s
= 80 °C
1200
71
430
T
j
= 150 °C
925
T
s
= 80 °C
154
175
A
2
s
W
°C
V
A
A
50 Hz Single Half Sine Wave
t
p
= 10 ms
T
j
=
T
jmax
Module Properties
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
jop
-40…+125
-40…(T
jmax
- 25)
°C
°C
Isolation Properties
DC Test Voltage*
Isolation voltage
V
isol
AC Voltage
Creepage distance
t
p
= 1 min
2500
6,3
V
mm
t
p
= 2 s
5500
V
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
With std lid
For more informations see handling in-
structions
With std lid
For more informations see handling in-
structions
6,3
> 200
mm
Copyright Vincotech
2
01 Mar. 2019/ Revision 4
V23990-K230-F40-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
CE
[V]
V
GE
[V]
V
DS
[V]
V
GS
[V]
V
F
[V]
I
C
[A]
I
D
[A]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Inverter Switch
Static
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CEsat
I
CES
I
GES
r
g
C
ies
f
= 1 Mhz
C
res
Q
g
-15/15
25
0
25
25
140
540
nC
V
GE
=
V
CE
15
0
20
1200
0
0,0024
70
25
25
150
25
25
none
4000
pF
5,3
1,5
5,8
1,95
2,31
6,3
2,2
V
V
µA
nA
Ω
120
240
Thermal
Thermal resistance junction to sink
R
th(j-s)
λ
paste
= 2,5 W/mK
(HPTP)
0,39
K/W
Dynamic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Q
r
FWD
= 4,5 μC
Q
r
FWD
= 11,5 μC
R
gon
= 8 Ω
R
goff
= 8 Ω
±15
600
70
25
150
25
150
25
150
25
150
25
150
25
150
98
98
21
27
217
285
87
126
3,740
6,385
4,093
6,632
ns
mWs
Copyright Vincotech
3
01 Mar. 2019/ Revision 4
V23990-K230-F40-PM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
CE
[V]
V
GE
[V]
V
DS
[V]
V
GS
[V]
V
F
[V]
I
C
[A]
I
D
[A]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Inverter Diode
Static
Forward voltage
Reverse leakage current
V
F
I
R
1200
75
25
150
25
150
2,33
2,26
2,6
120
14000
V
µA
Thermal
Thermal resistance junction to sink
R
th(j-s)
λ
paste
= 2,5 W/mK
(HPTP)
0,62
K/W
Dynamic
Peak recovery current
Reverse recovery time
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
I
RRM
t
rr
Q
r
E
rec
(di
rf
/dt)
max
di/dt
= 3024 A/μs
±15
di/dt
= 2913 A/μs
600
70
25
150
25
150
25
150
25
150
25
150
67
85
129
312
4,457
11,545
1,592
4,429
3099
606
A
ns
μC
mWs
A/µs
Thermistor
Rated resistance
Deviation of
R
100
R
100
Power dissipation constant
A-value
B-value
Vincotech PTC Reference
A
(25/50)
B
(25/100)
R
Δ
R/R
R
R
100
= 1670 Ω
25
100
100
25
25
25
-2
1670
0,76
7,635*10
-3
1,731*10
-5
1
+2
kΩ
%
Ω
mW/K
1/K
1/K²
E
Copyright Vincotech
4
01 Mar. 2019/ Revision 4
V23990-K230-F40-PM
datasheet
Inverter Switch Characteristics
figure 1.
Typical output characteristics
IGBT
figure 2.
Typical out put charact eristics
IGBT
I
C
= f(V
CE
)
210
I
C
= f(V
CE
)
210
I
C
(A)
I
C
(A )
V
GE
:
7V
8V
9V
10 V
11 V
180
180
150
150
12 V
13 V
14 V
15 V
16 V
17 V
120
120
90
90
60
60
30
30
0
0
1
2
3
4
0
V
C E
(V)
5
0
1
2
3
4
5
V
C E
(V)
t
p
=
V
GE
=
250
15
μs
V
T
j
:
25
°C
t
p
=
T
j
=
V
GE
from
250
150
μs
°C
150
°C
7 V to 17 V in steps of 1 V
figure 3.
Typical transf er charact erist ics
IGBT
figure 4.
Transient t hermal impedance as f unction of pulse duration
IGBT
I
C
= f(V
GE
)
70
(A)
Z
th(j-s)
= f(t
p
)
10
0
60
50
40
10
-1
30
0,5
0,2
20
Z
t h(j-s)
(K/W )
I
C
0,1
0,05
0,02
10
0,01
0,005
0
0
0
2
4
6
8
10
12
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
G E
(V)
t
p
(s)
10
2
t
p
=
V
CE
=
100
10
μs
V
T
j
:
25
°C
D
=
R
th(j-s)
=
t
p
/
T
0,39
K/W
IGBT thermal model values
150
°C
R
(K/W)
1,69E-02
3,35E-02
1,26E-01
1,26E-01
5,49E-02
2,83E-02
τ
(s)
7,05E-01
9,42E-02
1,36E-02
4,15E-03
7,81E-04
8,24E-05
Copyright Vincotech
5
01 Mar. 2019/ Revision 4
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