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V23990-K230-F40-/4A/-PM

Description
Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size2MB,16 Pages
ManufacturerVincotech
Websitehttps://www.vincotech.com/
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V23990-K230-F40-/4A/-PM Overview

Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel,

V23990-K230-F40-/4A/-PM Parametric

Parameter NameAttribute value
Objectid145128638171
package instructionFLANGE MOUNT, R-XUFM-X39
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)88 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate emitter threshold voltage maximum6.3 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X39
Number of components6
Number of terminals39
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)246 W
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)411 ns
Nominal on time (ton)125 ns
VCEsat-Max2.2 V
V23990-K230-F40-PM
datasheet
MiniSKiiP PACK 2
Features
● Solder less interconnection
● Designed for motor drives up to 7 kW
● Temperature sensor
● Standard (6.5mm) and thin (2.8mm) lids, 16mm housing
● Optional with pre-applied thermal grease
1200 V / 70 A
MiniSkiip 2 housing
Schematic
Target applications
● Servo Drives
● Industrial Motor Drives
● UPS
Types
● V23990-K230-F40-PM
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
Collector-emitter voltage
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
Short circuit ratings
Maximum junction temperature
V
CES
I
C
I
CRM
P
tot
V
GES
t
SC
T
jmax
V
GE
= 15 V
Vcc = 800 V
T
j
= 150 °C
T
j
=
T
jmax
t
p
limited by
T
jmax
T
j
=
T
jmax
T
s
= 80 °C
T
s
= 80 °C
1200
88
210
246
±20
10
175
V
A
A
W
V
µs
°C
Copyright Vincotech
1
01 Mar. 2019/ Revision 4

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Description Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel,
Objectid 145128638171 145128638173 145128638175 145128638176 145128638177 145128638172
package instruction FLANGE MOUNT, R-XUFM-X39 FLANGE MOUNT, R-XUFM-X39 FLANGE MOUNT, R-XUFM-X39 FLANGE MOUNT, R-XUFM-X39 FLANGE MOUNT, R-XUFM-X39 FLANGE MOUNT, R-XUFM-X39
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 88 A 88 A 88 A 88 A 88 A 88 A
Collector-emitter maximum voltage 1200 V 1200 V 1200 V 1200 V 1200 V 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate emitter threshold voltage maximum 6.3 V 6.3 V 6.3 V 6.3 V 6.3 V 6.3 V
Gate-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V 20 V
JESD-30 code R-XUFM-X39 R-XUFM-X39 R-XUFM-X39 R-XUFM-X39 R-XUFM-X39 R-XUFM-X39
Number of components 6 6 6 6 6 6
Number of terminals 39 39 39 39 39 39
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 246 W 246 W 246 W 246 W 246 W 246 W
surface mount NO NO NO NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER
transistor applications POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal off time (toff) 411 ns 411 ns 411 ns 411 ns 411 ns 411 ns
Nominal on time (ton) 125 ns 125 ns 125 ns 125 ns 125 ns 125 ns
VCEsat-Max 2.2 V 2.2 V 2.2 V 2.2 V 2.2 V 2.2 V
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