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V23990-P840-A48-PM

Description
Insulated Gate Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size1002KB,20 Pages
ManufacturerVincotech
Websitehttps://www.vincotech.com/
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V23990-P840-A48-PM Overview

Insulated Gate Bipolar Transistor

V23990-P840-A48-PM Parametric

Parameter NameAttribute value
Objectid110141063
Reach Compliance Codecompliant
ECCN codeEAR99
V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
flowPIM0 3rd Gen
Features
2 Clips housing in 12 and 17mm height
Trench Fieldstop Technology IGBT4
Optional w/o BRC
1200V/15A
flow0 Housing
Target Applications
Industrial Drives
Embedded Generation
Schematics
Types
V23990-P840-A48-PM 12mm height
V23990-P840-A49-PM 17mm height
V23990-P840-C48-PM 12mm height; w/o BRC
V23990-P840-C49-PM 17mm height; w/o BRC
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
jmax
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
2
1600
DC current
T
h
=80°C
T
c
=80°C
28
V
A
A
A2s
W
°C
220
220
33
175
Transistor Inverter
Collector-emitter voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
T
jmax
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
tp limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
18
V
A
A
W
V
ms
V
°C
45
52
±20
10
800
175
copyright Vincotech
1
Revision: 2

V23990-P840-A48-PM Related Products

V23990-P840-A48-PM V23990-P840-A49-PM V23990-P840-C48-PM
Description Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor
Objectid 110141063 110141064 110141065
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
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