V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
flowPIM0 3rd Gen
Features
●
2 Clips housing in 12 and 17mm height
●
Trench Fieldstop Technology IGBT4
●
Optional w/o BRC
1200V/15A
flow0 Housing
Target Applications
●
Industrial Drives
●
Embedded Generation
Schematics
Types
●
V23990-P840-A48-PM 12mm height
●
V23990-P840-A49-PM 17mm height
●
V23990-P840-C48-PM 12mm height; w/o BRC
●
V23990-P840-C49-PM 17mm height; w/o BRC
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
jmax
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
2
1600
DC current
T
h
=80°C
T
c
=80°C
28
V
A
A
A2s
W
°C
220
220
33
175
Transistor Inverter
Collector-emitter voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
T
jmax
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
tp limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
18
V
A
A
W
V
ms
V
°C
45
52
±20
10
800
175
copyright Vincotech
1
Revision: 2
V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Diode Inverter
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=T
j
max
tp limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
18
V
A
A
W
°C
30
38
175
Transistor BRC
Collector-emitter voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
cpuls
P
tot
V
GE
t
SC
V
CC
T
jmax
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
tp limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
h
=80°C
T
c
=80°C
1200
10
V
A
A
W
V
us
V
°C
24
30
±20
10
800
150
Diode BRC
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=T
j
max
tp limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
h
=80°C
T
c
=80°C
1200
10
V
A
A
W
°C
15
22
150
Thermal properties
Storage temperature
Operation temperature
T
stg
T
jop
-40…+125
-40…+150
°C
°C
Insulation properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
copyright Vincotech
2
Revision: 2
V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
(V) or
V
GS
(V)
Conditions
V
r
(V) or
V
CE
(V) or
V
DS
(V)
I
C
(A) or I
F
(A)
T(°C)
or I
D
(A)
Min
Value
Typ
Max
Unit
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50um
λ
= 1 W/mK
1600
30
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1
1,22
1,19
0,93
0,81
0,010
0,013
1,9
V
V
Ω
0,1
mA
Thermal resistance chip to heatsink per chip
R
thJH
2,16
K/W
Transistor Inverter
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Vcc=960V
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
15
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgon=16 Ohm
Rgoff=16 Ohm
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0
20
1200
0
VCE=VGE
0,0005
15
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
1,94
2,26
0,01
200
none
60
19
239
106
1,25
1,24
1000
100
56
93
6,5
V
V
mA
nA
Ω
ns
ns
ns
ns
mWs
mWs
pF
pF
pF
nC
±15
600
15
Thermal resistance chip to heatsink per chip
R
thJH
1,83
K/W
Diode Inverter
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
rm
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=16 Ohm
±15
600
15
1200
10
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,35
1,90
1,91
2,7
2,35
V
mA
A
ns
uC
A/ms
mWs
16
433
2,75
109
1,16
2,52
Thermal resistance chip to heatsink per chip
R
thJH
K/W
copyright Vincotech
3
Revision: 2
V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
(V) or
V
GS
(V)
Conditions
V
r
(V) or
V
CE
(V) or
V
DS
(V)
I
C
(A) or I
F
(A)
T(°C)
or I
D
(A)
Min
Value
Typ
Max
Unit
Transistor BRC
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Vcc=960V
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
8
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgon=32Ohm
Rgoff=32Ohm
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0
20
1200
0
VCE=VGE
0,0003
8
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1,6
5,8
1,87
2,22
6,5
2,1
0,05
200
none
V
V
mA
nA
Ω
ns
ns
ns
ns
mWs
mWs
pF
pF
pF
nC
72
24
228
104
0,71
0,62
490
50
30
50
15
600
8
Thermal resistance chip to heatsink per chip
R
thJH
2,36
K/W
Diode BRC
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
E
rec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=32Ohm
15
600
8
1200
7,5
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,67
1,61
2,2
250
V
mA
A
ns
mC
A/ms
mWs
10
427
1,64
73
0,69
3,15
Thermal resistance chip to heatsink per chip
R
thJH
K/W
Thermistor
Rated resistance
Power dissipation given Epcos-Typ
B-value
R
25
R
100
P
B
(25/100)
Tol. ±3%
Tol. ±13%
Tol. ±5%
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
19,1
1411
22
1486
210
4000
24,9
1560
kΩ
mW
K
copyright Vincotech
4
Revision: 2
V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
50
IC (A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
50
IC (A)
Output inverter IGBT
40
40
30
30
20
20
10
10
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
250
μs
25
°C
VGE from 7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
250
μs
125
°C
VGE from 7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
Ic = f(V
GE
)
16
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
50
I
F
(A)
Output inverter FRED
25 oC
125 oC
25 oC
125 oC
40
12
30
8
20
4
10
0
0
3
6
9
V
GE
(V)
12
0
0
1
2
3
V
F
(V)
4
At
t
p
=
V
CE
=
250
10
μs
V
At
t
p
=
250
μs
copyright Vincotech
5
Revision: 2
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