DMP3105LVT
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
75mΩ @ V
GS
= -10V
-30V
I
D
T
A
= 25°C
-3.9A
-3.3A
Features and Benefits
•
•
•
•
•
•
•
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
105mΩ @ V
GS
= -4.5V
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
•
DC-DC Converters
Power management functions
Backlighting
Motor Control
Mechanical Data
•
•
•
•
•
•
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
Top View
Ordering Information
(Note 3)
Part Number
DMP3105LVT-7
Notes:
Case
TSOT26
Packaging
3,000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
31P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
Apr
4
2012
Z
May
5
Jun
6
2013
A
Jul
7
2014
B
Aug
8
Sep
9
2015
C
Oct
O
Nov
N
2016
D
Dec
D
DMP3105LVT
Document number: DS35504 Rev. 2 - 2
1 of 6
www.diodes.com
November 2011
© Diodes Incorporated
DMP3105LVT
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
GS
= -10V
Steady
State
Steady
State
Steady
State
Steady
State
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
Value
-30
±12
3.1
2.5
2.7
2.2
3.9
3.1
3.3
2.7
2.2
20
Units
V
V
A
A
A
A
A
A
NEW PRODUCT
Continuous Drain Current (Note 4) V
GS
= -4.5V
Continuous Drain Current (Note 5) V
GS
= -10V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Maximum Continuous Body Diode Forward Current
Pulsed Drain Current (10us pulse, duty cycle=1%)
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
R
θ
Jc
T
J,
T
STG
Value
1.15
108
1.75
72
23.4
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10.0V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-30
⎯
⎯
-0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
-0.9
65
75
98
5
-0.7
839
47
43
12.3
9.0
19.8
1.6
1.1
9.7
17.7
269
64
Max
⎯
-100
±100
-1.5
75
98
150
⎯
-1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
nA
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -30V, V
GS
= 0V
V
GS
=
±12V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -4.2A
V
GS
= -4.5V, I
D
= -4.0A
V
GS
= -2.5V, I
D
= -3.0A
V
DS
= -15V, I
D
= -4.0A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -15V, I
D
= -4.0A
nA
V
mΩ
S
V
pF
Ω
nC
ns
V
GS
= -10V, V
DD
= -15V, R
G
= 6Ω,
I
D
= -1A
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMP3105LVT
Document number: DS35504 Rev. 2 - 2
2 of 6
www.diodes.com
November 2011
© Diodes Incorporated
DMP3105LVT
12
12
V
DS
= -5.0V
10
-I
D
, DRAIN CURRENT (A)
-I
D
, DRAIN CURRENT (A)
8
8
NEW PRODUCT
6
4
4
2
0
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
3
0
0
0.5
1
1.5
2
2.5
-V
GS
, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
0.2
0.2
V
GS
= 4.5V
V
GS
= -2.5V
0.16
0.16
T
A
=85°C
T
A
=125°C
T
A
=150°C
0.12
V
GS
= -4.5V
0.12
0.08
0.08
0.04
V
GS
= -10V
0.04
T
A
=25°C
T
A
=-55°C
0
0
3
6
9
12
I
D
, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
15
0
0
4
8
12
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
16
1.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Normalized)
1.7
0.2
0.16
1.3
0.12
1.1
0.08
0.9
0.7
0.04
0.5
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 6 On-Resistance Variation with Temperature
DMP3105LVT
Document number: DS35504 Rev. 2 - 2
3 of 6
www.diodes.com
November 2011
© Diodes Incorporated
DMP3105LVT
1.4
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1.2
16
I
S
, SOURCE CURRENT (A)
1
0.8
0.6
0.4
0.2
0
-50
I
D
= -250µA
I
D
= -1mA
T
A
= 25
°
C
20
12
NEW PRODUCT
8
4
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100000
0
0.4
0.6
0.8
1
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
f = 1MHz
1.2
10000
I
DSS
, LEAKAGE CURRENT (nA)
10000
T
A
= 150
°
C
C
T
, JUNCTION CAPACITANCE (pF)
C
ISS
1000
1000
100
100
C
OSS
T
A
= 85
°
C
10
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
1
0
T
A
= 25
°
C
C
RSS
10
0
5
10
15
20
25
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
I
D
(A) @
P
W
=10µs
I
D
(A) @P
W
=1ms
30
10
100
R
DS(ON)
Limited
8
I
D
, DRAIN CURRENT (A)
10
I
D
(A
)
@
P
V
GS
(V)
6
W
=
10
0µ
s
1
I
D
(A) @ DC
I
D
(A) @P
W
=10s
I
D
(A) @P
W
=1s
4
0.1
T
J(MAX)
= 150
°
C
T
A
= 25
°
C
Single Pulse
I
D
(A) @P
W
=100ms
I
D
(A) @P
W
=10ms
2
0
0
10
15
Q
G
-(nC)
Fig. 11 Gate Charge Characteristics
5
20
0.01
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMP3105LVT
Document number: DS35504 Rev. 2 - 2
4 of 6
www.diodes.com
November 2011
© Diodes Incorporated
DMP3105LVT
1
r(t), TRANSIENT THERMAL RESISTANCE
0.1
NEW PRODUCT
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
D
e1
E1
E
c
4x
θ
1
6x b
L
θ
L2
e
A
A2
A1
TSOT26
Dim Min Max Typ
A
—
1.00
—
A1
0.01 0.10
—
A2
0.84 0.90
—
D
—
—
2.90
E
—
—
2.80
E1
—
—
1.60
b
0.30 0.45
c
0.12 0.20
e
—
—
0.95
e1
—
—
1.90
L
0.30 0.50
L2
—
—
0.25
θ
0°
8°
4°
θ1
4°
12°
—
All Dimensions in mm
Suggested Pad Layout
C
C
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y1
Y (6x)
X (6x)
DMP3105LVT
Document number: DS35504 Rev. 2 - 2
5 of 6
www.diodes.com
November 2011
© Diodes Incorporated
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