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OM5219DC

Description
15 A, SILICON, RECTIFIER DIODE, TO-258AA
Categorysemiconductor    Discrete semiconductor   
File Size20KB,2 Pages
ManufacturerETC1
Download Datasheet View All

OM5219DC Overview

15 A, SILICON, RECTIFIER DIODE, TO-258AA

OM5204SC/RC/DC OM5206SC/RC/DC OM5219SC/RC/DC OM5235SC/RC/DC
OM5205SC/RC/DC OM5218SC/RC/DC OM5220SC/RC/DC
HERMETIC JEDEC TO-258AA HIGH EFFICIENCY,
CENTER-TAP RECTIFIER
30 Amp, 50 To 600 Volts, 35 To 50 ns trr
FEATURES
Very Low Forward Voltage
Very Fast Switching Time
Hermetic Metal Package, JEDEC TO-258AA
Low Thermal Resistance
Isolated Package
High Surge
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of products in a hermetic package is specifically designed for use at
power switching frequencies in excess of 100 kHz. The series combines two high
efficiency devices into one package, simplifying installation, reducing heat sink
hardware, and the need to obtain matched components. These devices are ideally
suited for Hi-Rel applications where small size and a hermetically sealed package
is required. Common anode configurations are also available. Common cathode
is standard.
ABSOLUTE MAXIMUM RATINGS
(Per Diode) @ 25°C
Peak Inverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 600 V
Maximum Average D.C. Output Current @ T
C
= 100° C . . . . . . . . . . . . . . . . . . . 15 A
Non-Repetitive Sinusoidal Surge Current 8.3 ms . . . . . . . . . . . . . . . . . . . . . . . . 150 A
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . - 55° C to + 150° C
Z
3.2
SCHEMATIC
1
2
COMMON
ANODE
1
2
OMXXXXDC
Common cathode is standard. Contact the factory for performance
characteristics for common anode and doubler.
Z-Pak also available.
MECHANICAL OUTLINE
2
COMMON
CATHODE
.165
.155
.695
.685
.270
.240
.045
.035
1
3
OMXXXXRC
3
3
DOUBLER
OMXXXXSC
.835
.815
.707
.697
1
2
3
.550
.530
.092 MAX.
.750
.500
.065
.055
.140 TYP.
.005
.200 TYP.
4 11 R4
Supersedes 1 07 R3
3.2 - 45
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