ISO
LINK
1
ANODE
BASE
OLF249
Radiation Tolerant
Phototransistor
Hermetic Surface Mount
Optocoupler
.015±.002
1
8
OLF XXX
S
2
3
4
7
6
5
.050 BSC
.200 MIN.
XXYY
7
COLLECTOR
5
CATHODE
EMITTER
.180 SQ. MAX
.030±.005
.100 MAX.
.004/.006
2
6
SEATING PLANE
SCHEMATIC
PACKAGE OUTLINE
Features
♦
Hermetic SMT package
♦
Compliant surface mounting leads
♦
High current transfer ratio
♦
Small package size
♦
High reliability and rugged construction
♦
Hi-rel screening available
♦
Radiation tolerant
NOTES:
Description
The OLF249 consists of a light emit-
ting diode optically coupled to a NPN silicon
phototransistor mounted in a 8-pin hermetic
surface mount flat pack package. The
leads can be formed to provide compliant
solder connections to the mounting sub-
strate. Electrical parameters are similar to
the JEDEC registered 4N49 optocoupler but
with much better CTR degradation charac-
teristics due to radiation exposure
Special electrical parametric selections
are availabe on request.
1. Measured between pins 1, 2 , 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. TA = 25°C and duration = 1 second.
2. Derate linearly to 125°C free-air temperature at 0.67 mA /
°C
above 65°C.
3. For pulse width
≤
1
µS,
pulse repetition rate
≤
300 pps.
4. Derate linearly to 125°C free-air temperature at 3.0 mW /
°C
above 25
°C
Absolute Maximum Ratings
Coupled
Input to Output Isolation Voltage
1
Storage Temperature Range
Operation Temperature Range
Mounting Temperature Range ( 10 seconds max. )
Input Diode
Average Input Current
2
Peak Forward Current
3
Reverse Voltage
Output Detector
Collector - Emitter Voltage
Emitter - Base Voltage
Collector - Base Voltage
Continuous Collector Current
Power Dissipation
4
±
1000 Vdc
-65
°C
to + 150
°C
-55
°C
to + 125
°C
240
°C
40 mA
1A
2.0 V
40 V
7V
45 V
50 mA
300 mW
ELECTRICAL CHARACTERISTIC
( T
A
= 25
°C,
Unless Otherwise Specified )
Parameter
On-State Collector Current
Symbol
I
C (ON)
Min
2.0
2.8
2.0
30
Max
12
Units
mA
mA
mA
µA
Test Conditions
I
F
= 1 mA, V
CE
= 5.0V
I
F
= 2 mA, V
CE
= 5.0V, T
A
= -55°C
I
F
= 2 mA, V
CE
= 5.0V, T
A
= 100°C
I
F
= 10 mA, V
CB
= 5.0V
I
F
= 2mA, I
C
=2.0mA
Fig. Note
2,3
On-State Coll.-Base Current
Saturation Voltage
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Off-State Leakage Current
Collector to Emitter
Collector to Base
Input Forward Voltage
I
CB(ON)
V
CE(SAT)
0.3
V
B
VCEO
B
VCBO
B
VEBO
I
CE(OFF)
I
CB(OFF)
V
F
40
45
7
100
100
10
1.8
1.4
1.2
2.2
1.8
1.6
100
10
11
5
25
25
V
V
V
nA
µA
nA
V
V
V
µA
Ω
pF
µS
µS
I
CE
= 1 mA
I
CB
= 100
µA
I
EB
= 100
µA
V
CE
= 20V
V
CE
= 20V, TA =100
°C
V
CB
= 20V
I
F
= 10mA, TA = -55°C
I
F
= 10mA
I
F
= 10mA, TA = 100°C
V
R
= 2.0V
V
I-O
=
±1000Vdc
V
I-O
= 0V, f = 1 MHz
V
CC
= 10V, RL = 100
Ω
I
F
= 5mA
4
1
1
1
1
1
Input Reverse Current
Input to Output Resistance
Input to Output Capacitance
Rise Time
Fall Time
I
R
r
I-O
c
I-O
tr
tf
ALL TYPICAL @ T
A
= 25°C
TYPICAL PERFORMANCE CURVES
100
9
NORMALIZED COLLECTOR CURRENT
I
F
- FORWARD CURRENT ( mA )
8
7
6
5
4
3
2
1
0
0
1
NORMALIZED TO:
I
F = 1 mA
VCE = 5V
125 °C
25 °C
-55 °C
10
T
A = 25 °C
1
.1
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2
3
4
5
6
7
8
9
10
V
F
- FORWARD VOLTAGE ( V )
I
F
= FORWARD CURRENT ( mA )
Fig. 1 -
Diode Forward Characteristics
1.8
1.6
NORMALIZED TO:
Fig. 2 -
Normalized
Ic vs. I
F
NORMALIZED CTRCE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75
V
CE = 5V
T
A = 25 °C
I
F = 1 mA
-50
-25
0
25
50
75
100 125 150
AMBIENT TEMPERATURE (°C)
Fig. 3 -
Normalized CTR vs. Temperature
INPUT
I
F
0
V
CC
Pulse Width = 100µS
Duty Cycle = 1%
I
F
V
OUT
0
90 %
10 %
t
r
t
f
100Ω
R
L
V
OUT
Fig. 4 -
Switching Test Circuit
Embedded System
京公网安备 11010802033920号
EEWORLD
