UNISONIC TECHNOLOGIES CO., LTD
UF5N15Z
5A, 150V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
Power MOSFET
The UTC
UF5N15Z
is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and superior switching
performance.
TO-252
FEATURES
* R
DS(ON)
<1.9Ω @ V
GS
=10V, I
D
=5A
* High switching speed
* Low gate charge
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
UF5N15ZL-TN3-T
UF5N15ZG-TN3-T
UF5N15ZL-TN3-R
UF5N15ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
UF5N15ZL-TN3-R
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) R: Tape Reel, T: Tube
(2) TN3: TO-252
(3) L: Lead Free, G: Halogen Free
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Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-861. B
UF5N15Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
V
DSS
150
V
V
GSS
±20
V
Continuous
I
D
5
A
Drain Current
Pulsed
I
DM
20
A
Avalanche Current
I
AR
5
A
Avalanche Energy
Single Pulsed
E
AS
19
mJ
Power Dissipation
P
D
54
W
Junction Temperature
T
J
+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=1.5mH, I
AS
=5A, V
DD
=25V, R
G
=25Ω, Starting T
J
=25°C.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
110
2.13
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
MIN TYP MAX UNIT
150
1
10
-10
2
0.1
718
77
3.3
10.6
3.5
2.3
9.2
1.6
14
2.9
4
1.9
955
105
5
15
V
μA
μA
μA
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=150V, V
GS
=0V
Forward
V
GS
=+20V, V
DS
=0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
Gate to Source Charge
Q
GS
V
GS
=10V, V
DS
=75V, I
D
=4.5A
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=1A, R
G
=25Ω,
V
GS
=10V
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=5A, V
GS
=0V
19
10
24
10
5
20
1.43
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QW-R502-861. B
UF5N15Z
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Power MOSFET
300
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, I
D
(µA)
250
200
150
100
50
0
Drain Current, I
D
(µA)
200
150
100
50
0
0
0
40
120
160 200
80
Drain-Source Breakdown Voltage, BV
DSS
(V)
0.7
2.1 2.8
1.4
3.5 4.2
Gate Threshold Voltage, V
TH
(V)
Drain-Source On-State Resistance
Characteristics
6
V
GS
=10V, I
D
=5A
5
Drain Current vs. Source to Drain Voltage
6
5
Drain Current, I
D
(A)
Drain Current, I
D
(A)
0
4
1
2
3
Drain to Source Voltage, V
DS
(V)
5
4
3
2
1
0
4
3
2
1
0
0
0.2
0.4 0.6
0.8 1.0 1.2
Source to Drain Voltage, V
SD
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-861. B
Embedded System
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