DMP3008SFGQ
30V P-CHANNEL ENHANCEMENT MODE MOSFET
®
PowerDI
Product Summary
ADVANCE INFORMATION
BV
DSS
R
DS(ON)
Max
17mΩ @ V
GS
= -10V
-30V
25mΩ @ V
GS
= -4.5V
-7.1A
I
D
Max
T
A
= 25°C
-8.6A
Features and Benefits
Low R
DS(ON)
– Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
®
Drain
PowerDI3333-8
S
S
Pin 1
S
G
Gate
D
D
D
D
Source
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 5)
Part Number
DMP3008SFGQ-7
DMP3008SFGQ-13
Notes:
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
S31 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
S31
PowerDI is a registered trademark of Diodes Incorporated.
DMP3008SFGQ
Document number: DS38141 Rev. 1 - 2
1 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP3008SFGQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= -10V
Steady
State
t<10s
Steady
State
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
Value
-30
±20
-8.6
-7.0
-11.7
-9.3
-7.1
-5.6
-9.6
-7.6
-80
-3.0
Units
V
V
A
A
A
A
A
A
Continuous Drain Current (Note 7) V
GS
= -4.5V
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
Steady State
t<10s
Steady State
t<10s
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.9
140
72
2.2
57
30
7.1
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMP3008SFGQ
Document number: DS38141 Rev. 1 - 2
2 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP3008SFGQ
100
R
DS(on)
Limited
P
W
= 10µs
100
P
(PK)
, PEAK TRANSIENT POIWER (W)
90
80
70
60
50
40
30
20
10
ADVANCE INFORMATION
-I
D
, DRAIN CURRENT (A)
10
DC
Single Pulse
R
JA
= 57
C/W
R
JA(t)
= r
(t)
* R
JA
T
J
- T
A
= P * R
JA(t)
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
0.1
T
J(max)
= 150°C
T
A
= 25°C
Single Pulse
P
W
= 100µs
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
100
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 57°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
DMP3008SFGQ
Document number: DS38141 Rev. 1 - 2
3 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP3008SFGQ
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -10V)
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-30
-1.1
Typ
-1.6
12.5
18.5
13
-0.7
2,230
328
294
6.4
47
23
9.4
5.6
10.5
8.5
90
40
Max
-1.0
100
-2.1
17
25
-1.0
Unit
V
µ
A
nA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -10A
V
DS
= -15V, I
D
= -10A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -15V, I
D
= -10A
pF
Ω
nC
nS
V
GS
= -10V, V
DS
= -15V, R
G
= 6Ω
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP3008SFGQ
Document number: DS38141 Rev. 1 - 2
4 of 8
www.diodes.com
October 2015
© Diodes Incorporated
DMP3008SFGQ
30
30
25
25
V
DS
= -5.0V
ADVANCE INFORMATION
-I
D
, DRAIN CURRENT (A)
-I
D
, DRAIN CURRENT (A)
V
GS
= 10V
20
V
GS
= 4.5V
V
GS
= 4.0V
20
15
V
GS
= 3.5V
V
GS
= 3.0V
15
10
10
T
A
= 150
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
5
V
GS
= 2.5V
5
T
A
= 125
C
0
0
0
0.5
1.0
1.5
-V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 4 Typical Output Characteristics
2.0
1
2
3
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristics
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
)
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE(
)
0.05
0.04
V
GS
= -4.5V
0.04
0.03
T
A
= 150
C
T
A
= 125
C
0.03
0.02
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
0.02
0.01
0.01
0
0
5
10
15
20
25
-I
D
, DRAIN SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
0
0
5
10
15
20
25
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 7 Typical On-Resistance vs.
Drain Current and Temperature
30
1.5
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.7
0.05
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Normalized)
0.04
1.3
0.03
V
GS
= -4.5V
I
D
= -5A
1.1
0.02
0.9
0.7
0.5
-50
0.01
V
GS
= -10V
I
D
= -10A
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 8 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 9 On-Resistance Variation with Temperature
DMP3008SFGQ
Document number: DS38141 Rev. 1 - 2
5 of 8
www.diodes.com
October 2015
© Diodes Incorporated
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