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MCL4448-TP

Description
0.15 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size655KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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MCL4448-TP Overview

0.15 A, SILICON, SIGNAL DIODE

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MCL4448
Features
Silicon epitaxial planar diode
Fast Switching diodes
500mW power dissipation
This diode is also available in the DO-35 case with the type
designation 1N4448, in the Minimelf case with the type designation
DL4448
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
500mW 100 Volt
Silicon Epitaxial Diode
MICROMELF
Cathode Mark
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
Junction Temperature
Surge Forward
Current
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Minimum Reverse
Breakdown Voltage
Typical Junction
Capacitance
V
R
V
RM
I
AV
P
TOT
T
J
I
FSM
75V
100V
150mA
500mW
1)
150
O
C
500mA
Resistive Load
f > 50Hz
T
A
=25
O
C
t<1S, T
J
=25
O
C
DIMENSIONS
INCHES
MIN
.071
.004
.047
MM
MIN
1.8
.10
1.20
Maximum Ratings
Operating Temperature: -55
O
C to +150
O
C
Storage Temperature: -55
O
C to +150
O
C
Maximum Thermal Resistance; 350K/W Junction To Ambient
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
C
B
A
V
F
1.0V(MAX)
I
FM
= 100mA;
0.62-0.72V
I
FM
= 5.0mA
I
R
25nA
5.0uA
50uA
100V
T
J
=25
O
C, V
R
=20V
V
R
=75V,
V
R
=20V T
J
=150
O
C
DIM
A
B
C
MAX
.079
.008
.051
MAX
2.0
.20
1.30
NOTE
Tested with
100uA puse
Measured at
C
J
4.0pF
V
R
=V
F
=0V
I
F
=10mA,
Reverse Recovery
V
R
= 6.0V
4.0nS
T
rr
Time
R
L
=100OHMS
1) Valid provided that leads at a distance of 8mm from case are kept
at ambient temperature(DO-35)
V
(BR)R
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
SUGGESTED SOLDER
PAD LAYOUT
0.039
0.055”
0.030”
www.mccsemi.com
Revision: A
2011/01/01

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