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MRF373AR1

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size334KB,8 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRF373AR1 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

MRF373AR1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-CDFM-F2
Reach Compliance Codeunknow
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage70 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF373A/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
Integrated ESD Protection
D
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MRF373AR1
MRF373ASR1
470 – 860 MHz, 75 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF373AR1
G
CASE 360C–05, STYLE 1
NI–360S
MRF373ASR1
S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
MRF373AR1
MRF373ASR1
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
Symbol
V
DSS
V
GS
P
D
Value
70
– 0.5, +15
197
1.12
278
1.59
– 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF373AR1
MRF373ASR1
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF373AR1
MRF373ASR1
Symbol
R
θJC
Max
0.89
0.63
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF373AR1 MRF373ASR1
1

MRF373AR1 Related Products

MRF373AR1 MRF373ASR1
Description UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Maker Motorola ( NXP ) Motorola ( NXP )
package instruction FLANGE MOUNT, R-CDFM-F2 FLATPACK, R-CDFP-F2
Reach Compliance Code unknow unknow
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 70 V 70 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F2 R-CDFP-F2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLATPACK
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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