MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF373A/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
•
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
•
100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
•
Integrated ESD Protection
D
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal
Impedance Parameters
•
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MRF373AR1
MRF373ASR1
470 – 860 MHz, 75 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF373AR1
G
CASE 360C–05, STYLE 1
NI–360S
MRF373ASR1
S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
MRF373AR1
MRF373ASR1
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
Symbol
V
DSS
V
GS
P
D
Value
70
– 0.5, +15
197
1.12
278
1.59
– 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF373AR1
MRF373ASR1
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF373AR1
MRF373ASR1
Symbol
R
θJC
Max
0.89
0.63
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF373AR1 MRF373ASR1
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=1
µA)
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
µA)
Gate Quiescent Voltage
(V
DS
= 32 V, I
D
= 100 mA)
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 3 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 32 V, V
GS
= 0, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
(50 ohm system)
Common Source Power Gain
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
Drain Efficiency
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
Load Mismatch
(V
DD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz,
Load VSWR at 10:1 at All Phase Angles)
G
ps
η
ψ
No Degradation in Output Power
16.5
56
18.2
60
—
—
dB
%
C
iss
C
oss
C
rss
—
—
—
98.5
49
2
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
2
2.5
—
2.9
3.3
0.41
4
4.5
0.45
Vdc
Vdc
Vdc
V
(BR)DSS
I
DSS
I
GSS
70
—
—
—
—
—
—
1
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
MRF373AR1 MRF373ASR1
2
MOTOROLA RF DEVICE DATA
R3
V
GG
C17
R2 C12
C14
C13
R1
RF INPUT
C11
C10
C9
CUT OUT AREA
C8
C7
C1
C2
C16
C15
L1
C3
C4
C5
C6
RF OUTPUT
V
DD
MRF373A
Rev 01
Figure 1. MRF373AR1/ASR1 Narrowband Test Circuit Component Layout
Table 1. MRF373AR1/ASR1 Narrowband Test Circuit Component Layout Designations and Values
Designation
C1, C2
C3
C4
C5, C10
C6
C7
C8
C9
C11
C12
C13
C14, C15
C16
C17
L1A
R1, R2
R3
PCB
Description
18 pF Chip Capacitors, B Case, ATC
12 pF Chip Capacitor, B Case, ATC
1.8 pF Chip Capacitor, B Case, ATC
51 pF Chip Capacitors, B Case, ATC
0.3 pF Chip Capacitor, B Case, ATC (Used only on the MRF373AS)
15 pF Chip Capacitor, B Case, ATC
10 pF Chip Capacitor, B Case, ATC
2.7 pF Chip Capacitor, B Case, ATC
0.5 pF Chip Capacitor, B Case, ATC
1000 pF Chip Capacitor, B Case, ATC
39 pF Chip Capacitor, B Case, ATC
470 pF Chip Capacitors, B Case, ATC
2.2
mF,
100 V Chip Capacitor, Vishay #VJ3640Y225KXBAT
10
mF,
35 V Tantalum Capacitor, Kemet #T491D106K35AS
12 nH, Coilcraft #A04T
390
Ω, 1/2 Ω
Chip Resistors, Vishay Dale (2010)
1 kΩ,
1/2 Ω
Chip Resistor, Vishay Dale (2010)
MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX–0300–55),
Height 30 mils,
ε
r
= 2.55
MOTOROLA RF DEVICE DATA
MRF373AR1 MRF373ASR1
3
TYPICAL CHARACTERISTICS
20
19
G ps , POWER GAIN (dB)
18
17
100 mA
16
15
I
DQ
= 500 mA
400 mA
300 mA
200 mA
V
DD
= 32 Vdc
f = 860 MHz
1
10
P
out
, OUTPUT POWER (WATTS) CW
100
Figure 2. Power Gain versus Output Power
30
G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
25
20
15
10
5
800
V
DD
= 32 Vdc
P
out
= 75 W (CW)
I
DQ
= 200 mA
G
ps
η
62
60
IRL
58
56
54
52
920
η
, DRAIN EFFICIENCY (%)
C rss , CAPACITANCE (pF)
820
840
860
880
900
f, FREQUENCY (MHz)
Figure 3. Performance in Narrowband Circuit
200
C oss , C iss , CAPACITANCE (pF)
20
150
15
100
C
iss
10
50
C
oss
C
rss
5
0
0
10
20
30
40
50
0
60
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Voltage
MRF373AR1 MRF373ASR1
4
MOTOROLA RF DEVICE DATA
f = 845 MHz
Z
in
Z
o
= 2
Ω
f = 875 MHz
f = 845 MHz
Z
OL
*
f = 875 MHz
V
DD
= 32 V, I
DQ
= 200 mA, P
out
= 75 W CW
f
MHz
845
860
875
Z
in
Z
in
Ω
0.58 + j0.29
0.56 + j0.11
0.56 – j0.06
Z
OL
*
Ω
1.60 – j0.07
1.65 – j0.22
1.79 – j0.38
= Complex conjugate of the source impedance.
Z
OL
* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
Note:
Z
OL
* was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z
in
Z
*
OL
Figure 5. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF373AR1 MRF373ASR1
5
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