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B40C1000G

Description
Bridge Rectifier Diode, 1 Phase, 1.2A, 65V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size74KB,2 Pages
ManufacturerGeneral Instrument
Download Datasheet Parametric View All

B40C1000G Overview

Bridge Rectifier Diode, 1 Phase, 1.2A, 65V V(RRM), Silicon,

B40C1000G Parametric

Parameter NameAttribute value
Objectid1438681599
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PBCY-W4
Maximum non-repetitive peak forward current45 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current1.2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage65 V
Maximum reverse current0.00001 µA
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
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