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P600K

Description
6 A, 800 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size144KB,4 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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P600K Overview

6 A, 800 V, SILICON, RECTIFIER DIODE

P600K Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknow
Other featuresLOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
Maximum reverse recovery time2.5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
,
IJ
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
P600A thru P600M
General Purpose Plastic Rectifier
FEATURES
P600
Low forward voltage drop
Low leakage current
High forward current capability
High forward surge capability
Solder dip 275 °C max. 10 s.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Ip(AV)
6.0 A
50V to 1000V
VRRM
IFSM
V
F
IR
400 A
0.9V, 1,0V
5.0 uA
150°C
Case: P600, void-free molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-8102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Tj max.
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average
current at
T
A
= 60 °C, 0.375" (9.5 mm)
lead length (fig. 1)
T
L
= 60 "C, 0.1 25" (3.1 8 mm)
lead length (fig. 2)
lp(AV)
SYMBOL
VRRM
V
RMS
P600A
50
35
50
P600B
100
70
100
R6000
200
140
200
P600G
400
280
400
6.0
P600J
600
420
600
P600K
800
560
800
P600M
UNIT
V
V
V
1000
700
V
DC
1000
A
22
400
A
°C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
!PSM
Tj, TSTG
-50to+ 150
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

P600K Related Products

P600K R6000 P600G P600A P600B P600M P600J
Description 6 A, 800 V, SILICON, RECTIFIER DIODE 6 A, 400 V, SILICON, RECTIFIER DIODE 6 A, 400 V, SILICON, RECTIFIER DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE 6 A, 1000 V, SILICON, RECTIFIER DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE
Maker New Jersey Semiconductor - New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
Reach Compliance Code unknow - unknow unknow unknow unknow unknow
Other features LOW LEAKAGE CURRENT - LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
application GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V - 1.3 V 1.3 V 1.3 V 1.4 V 1.3 V
JESD-30 code O-PALF-W2 - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 400 A - 400 A 400 A 400 A 400 A 400 A
Number of components 1 - 1 1 1 1 1
Phase 1 - 1 1 1 1 1
Number of terminals 2 - 2 2 2 2 2
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C - -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 6 A - 6 A 6 A 6 A 6 A 6 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM - LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 800 V - 400 V 50 V 100 V 1000 V 600 V
Maximum reverse current 5 µA - 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 2.5 µs - 2.5 µs 2.5 µs 2.5 µs 2.5 µs 2.5 µs
surface mount NO - NO NO NO NO NO
Terminal form WIRE - WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL - AXIAL AXIAL AXIAL AXIAL AXIAL
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