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P600G

Description
6 A, 400 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size144KB,4 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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P600G Overview

6 A, 400 V, SILICON, RECTIFIER DIODE

P600G Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
Other featuresLOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage400 V
Maximum reverse current5 µA
Maximum reverse recovery time2.5 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
,
IJ
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
P600A thru P600M
General Purpose Plastic Rectifier
FEATURES
P600
Low forward voltage drop
Low leakage current
High forward current capability
High forward surge capability
Solder dip 275 °C max. 10 s.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Ip(AV)
6.0 A
50V to 1000V
VRRM
IFSM
V
F
IR
400 A
0.9V, 1,0V
5.0 uA
150°C
Case: P600, void-free molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-8102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Tj max.
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average
current at
T
A
= 60 °C, 0.375" (9.5 mm)
lead length (fig. 1)
T
L
= 60 "C, 0.1 25" (3.1 8 mm)
lead length (fig. 2)
lp(AV)
SYMBOL
VRRM
V
RMS
P600A
50
35
50
P600B
100
70
100
R6000
200
140
200
P600G
400
280
400
6.0
P600J
600
420
600
P600K
800
560
800
P600M
UNIT
V
V
V
1000
700
V
DC
1000
A
22
400
A
°C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
!PSM
Tj, TSTG
-50to+ 150
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

P600G Related Products

P600G R6000 P600A P600K P600B P600M P600J
Description 6 A, 400 V, SILICON, RECTIFIER DIODE 6 A, 400 V, SILICON, RECTIFIER DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE 6 A, 800 V, SILICON, RECTIFIER DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE 6 A, 1000 V, SILICON, RECTIFIER DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE
Maker New Jersey Semiconductor - New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
Reach Compliance Code unknow - unknow unknow unknow unknow unknow
Other features LOW LEAKAGE CURRENT - LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
application GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V - 1.3 V 1.3 V 1.3 V 1.4 V 1.3 V
JESD-30 code O-PALF-W2 - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 400 A - 400 A 400 A 400 A 400 A 400 A
Number of components 1 - 1 1 1 1 1
Phase 1 - 1 1 1 1 1
Number of terminals 2 - 2 2 2 2 2
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C - -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 6 A - 6 A 6 A 6 A 6 A 6 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM - LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 400 V - 50 V 800 V 100 V 1000 V 600 V
Maximum reverse current 5 µA - 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 2.5 µs - 2.5 µs 2.5 µs 2.5 µs 2.5 µs 2.5 µs
surface mount NO - NO NO NO NO NO
Terminal form WIRE - WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL - AXIAL AXIAL AXIAL AXIAL AXIAL
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