US1AF THRU US1MF
SURFACE MOUNT ULTRA FAST RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
SMAF
Cathode Band
Top View
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Ultra fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed
260 C/10 seconds at terminals
Glass passivated chip junction
0.106(2.70)
0.094(2.40)
0.063(1.60)
0.051(1.30)
0.146(3.7)
0.130(3.3)
0.051(1.30)
0.043(1.10)
0.0091(0.23)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case
: JEDEC SMAF molded plastic body over passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.0018
ounce, 0.064 grams
0.193(4.90)
0.173(4.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
US1AF US1BF US1DF US1GF US1JF US1KF US1MF
UNITS
VOLTS
VOLTS
VOLTS
Amp
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
50
1.0
30.0
1.4
5.0
50.0
75
15.0
50.0
-50 to +150
1.7
Amps
Volts
µ
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES US1AF THRU US1MF
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
25
0.6
20
0.4
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
15
0.2
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
INSTANTANEOUS FORWARD
CURRENT,AMPERES
20
10
T
J
=25 C
PULSE WIDTH=300
µs
1%DUTY CYCLE
100
1
TJ=100 C
10
0.1
US1AF-US1DF
US1GF
US1JF-US1MF
0.01
0.2
0.6
1.0
1.4
1.8
2.0
1
TJ=25 C
0.1
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
200
100
T
J
=25 C
10
10
1
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
