CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistors
Spec. No. : C307S6R
Issued Date : 2016.03.30
Revised Date :
Page No. : 1/7
(dual transistors)
HBA1514S6R
Features
•
Two BTA1514 chips in a SOT-363 package.
•
Mounting possible with SOT-323 automatic mounting machines.
•
Transistor elements are independent, eliminating interference.
•
Mounting cost and area can be cut in half.
•
Complementary to HBC3906S6R.
•
Pb-free lead plating and halogen-free package.
Symbol
HBA1514S6R
Outline
SOT-363R
Ordering Information
Device
HBA1514S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBA1514S6R
CYStek Product Specification
CYStech Electronics Corp.
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note :
150mW per element must not be exceeded
Spec. No. : C307S6R
Issued Date : 2016.03.30
Revised Date :
Page No. : 2/7
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
θJA
Tj ; Tstg
Limits
-180
-160
-5
-0.6
200
(Note )
625
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
1
*V
BE(sat)
2
h
FE
1
h
FE
2
h
FE
3
h
FE
4
f
T
Cob
Min.
-180
-160
-5
-
-
-
-
-
-
100
100
50
120
100
-
Typ.
-
-
-
-
-
0.11
0.25
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.16
-0.3
-1
-1
-
-
-
270
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
I
C
=-50μA
I
C
=-1mA
I
E
=-50μA
V
CB
=-120V
V
EB
=-4V
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
V
CE
=-6V, I
C
=-2mA
V
CE
=-30V, I
C
=-10mA, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380μs,
Duty Cycle≤2%
HBA1514S6R
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
1000
H
FE
V
CE
=6V
Current Gain---
H
FE
Spec. No. : C307S6R
Issued Date : 2016.03.30
Revised Date :
Page No. : 3/7
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
V
CE(SAT)
@I
C
=10I
B
100
V
CE
=5V
1000
10
V
CE
=1V
1
0.1
1
10
100
1000
Collector Current---I
C
(mA)
100
1
10
100
Collector Current---I
C
(mA)
1000
Saturation Voltage vs Collector Current
1000
Cutoff Frequency vs Collector Current
1000
Cutoff Frequency---f
T
(MHZ)
Saturation Voltage---(mV)
f
T
@V
CE
=10V
V
BE(SAT)
@I
C
=10I
B
100
100
1
10
100
1000
Collector Current---I
C
(mA)
10
0.1
1
10
100
Collector Current---I
C
(mA)
Capacitance Characteristics
100
Power Derating Curves
250
Power Dissipation---PD(mW)
Cib
200
Dual
Capacitance---(pF)
150
100
50
0
Single
10
Cob
f
T
=1MHz
1
0.1
1
10
Reverse Biased Voltage---V
CB,
V
EB
(V)
100
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
HBA1514S6R
CYStek Product Specification
CYStech Electronics Corp.
Recommended Soldering Footprint
Spec. No. : C307S6R
Issued Date : 2016.03.30
Revised Date :
Page No. : 4/7
HBA1514S6R
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C307S6R
Issued Date : 2016.03.30
Revised Date :
Page No. : 5/7
Carrier Tape Dimension
HBA1514S6R
CYStek Product Specification
京公网安备 11010802033920号
EEWORLD
