INCHANGE
Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
2SB612
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -140V(Min)
·High
Power Dissipation-
: P
C
= 100W(Max)@T
C
=25℃
·Complement
to Type 2SD582
APPLICATIONS
·Recommended
for 80~100W audio amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
-180
-140
-6
-12
-15
-2
100
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
isc Website
：
www.iscsemi.cn
1
isc & iscsemi
is registered trademark
INCHANGE
Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB612
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -30mA; R
BE
=
∞
-140
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -5mA; I
C
= 0
-6
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -7A; I
B
= -0.7A
-1.5
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= -1A; V
CE
= -5V
-1.5
V
I
CBO
Collector Cutoff Current
V
CB
= -160V; I
E
= 0
-10
μ A
h
FE-1
DC Current Gain
I
C
= -1A; V
CE
= -5V
35
200
h
FE-2
DC Current Gain
I
C
= -7A; V
CE
= -5V
20
h
FE-1
Classifications
A
35-70
B
60-120
C
100-200
isc Website
：
www.iscsemi.cn
2
isc & iscsemi
is registered trademark
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