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BUT11

Description
POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size74KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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POWER TRANSISTOR

BUT11 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)5 A
ConfigurationSingle
Minimum DC current gain (hFE)10
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT11; BUT11A
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13

BUT11 Related Products

BUT11 BUT11A
Description POWER TRANSISTOR 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Is it Rohs certified? incompatible conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow
Maximum collector current (IC) 5 A 5 A
Configuration Single Single
Minimum DC current gain (hFE) 10 10
JESD-609 code e0 e3
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 100 W 100 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
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