BUT12A datasheet, PDF - EEWORLD Datasheet

BUT12A: DescriptionSilicon diffused power transistors; CategoryDiscrete semiconductor The transistor; File Size77KB，12 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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Silicon diffused power transistors

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	8 A
Configuration	Single
Minimum DC current gain (hFE)	10
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	125 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

DISCRETE SEMICONDUCTORS

DATA SHEET

BUT12; BUT12A

Silicon diffused power transistors

Product speciﬁcation

Supersedes data of February 1996

File under Discrete Semiconductors, SC06

1997 Aug 13

	BUT12A	BUT12
Description	Silicon diffused power transistors	Silicon diffused power transistors
Is it Rohs certified?	incompatible	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknow	unknow
Maximum collector current (IC)	8 A	8 A
Configuration	Single	Single
Minimum DC current gain (hFE)	10	10
JESD-609 code	e0	e0
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	125 W	125 W
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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