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BUT12

Description
Silicon diffused power transistors
CategoryDiscrete semiconductor    The transistor   
File Size77KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BUT12 Overview

Silicon diffused power transistors

BUT12 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)8 A
ConfigurationSingle
Minimum DC current gain (hFE)10
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)125 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12; BUT12A
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13

BUT12 Related Products

BUT12 BUT12A
Description Silicon diffused power transistors Silicon diffused power transistors
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow
Maximum collector current (IC) 8 A 8 A
Configuration Single Single
Minimum DC current gain (hFE) 10 10
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 125 W 125 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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