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BUT12AI

Description
Silicon Diffused Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size49KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BUT12AI Overview

Silicon Diffused Power Transistor

BUT12AI Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
Maximum collector current (IC)8 A
ConfigurationSingle
Minimum DC current gain (hFE)14
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)110 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12AI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited
for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Inductive fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5
MAX.
1000
450
8
20
110
1.5
-
300
UNIT
V
V
A
A
W
V
A
ns
T
hs
25 ˚C
I
C
= 5 A; I
B
= 0.86A
I
Con
= 5 A; I
Bon
= 1.0 A;T
j
100˚C
PINNING - TO220AB
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
8
20
4
6
110
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
T
hs
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
-
MAX.
1.15
60
UNIT
K/W
K/W
June 1997
1
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