DISCRETE SEMICONDUCTORS
DATA SHEET
BUT18; BUT18A
Silicon diffused power transistors
Product specification
Supersedes data of 1997 Aug 13
1999 Jun 11
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
dbook, halfpage
BUT18; BUT18A
APPLICATIONS
•
Converters
•
Inverters
•
Switching regulators
•
Motor control systems.
MBK106
2
1
3
MBB008
PINNING
PIN
1
2
3
DESCRIPTION
base
collector; connected to
mounting base
emitter
1 2 3
Fig.1 Simplified outline (TO-220AB) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CESM
BUT18
BUT18A
V
CEO
collector-emitter voltage
BUT18
BUT18A
V
CEsat
I
Csat
I
C
I
CM
P
tot
t
f
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Fig.2
see Fig.2
T
mb
≤
25
°C;
see Fig.4
resistive load; see Figs 10 and 11
see Fig.7
open base
400
450
1.5
4
6
12
110
0.8
V
V
V
A
A
A
W
µs
PARAMETER
collector-emitter peak voltage
V
BE
= 0
850
1000
V
V
CONDITIONS
MAX.
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
thermal resistance from junction to mounting base
VALUE
1.15
UNIT
K/W
1999 Jun 11
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CESM
BUT18
BUT18A
V
CEO
collector-emitter voltage
BUT18
BUT18A
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C;
see Fig.4
see Fig.2
see Fig.2
open base
−
−
−
−
−
−
−
−
PARAMETER
collector-emitter peak voltage
V
BE
= 0
−
−
CONDITIONS
BUT18; BUT18A
MIN.
MAX.
850
1000
400
450
4
6
12
3
6
110
+150
150
V
V
V
V
A
A
A
A
A
UNIT
W
°C
°C
−65
−
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
CEOsust
PARAMETER
collector-emitter sustaining
voltage
BUT18
BUT18A
V
CEsat
V
BEsat
I
CES
collector-emitter saturation voltage I
C
= 4 A; I
B
= 0.8 A; see Fig.7
base-emitter saturation voltage
collector-emitter cut-off current
I
C
= 4 A; I
B
= 0.8 A; see Fig.8
V
CE
= V
CESMmax
; V
BE
= 0; note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°C;
note 1
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 10 mA; see Fig.9
V
CE
= 5 V; I
C
= 1 A; see Fig.9
Switching times resistive load
(see Figs 10 and 11)
t
on
t
s
t
f
t
s
t
f
Note
1. Measured with a half-sinewave voltage (curve tracer).
1999 Jun 11
3
turn-on time
storage time
fall time
I
Con
= 4 A; I
Bon
=
−I
Boff
= 800 mA
I
Con
= 4 A; I
Bon
=
−I
Boff
= 800 mA
I
Con
= 4 A; I
Bon
=
−I
Boff
= 800 mA
−
−
−
−
−
−
1
4
0.8
µs
µs
µs
µs
ns
CONDITIONS
I
C
= 0.1 A; I
Boff
= 0; L = 25 mH; see
Figs 5 and 6
400
450
−
−
−
−
−
10
10
−
−
−
−
−
−
−
18
20
−
−
1.5
1.3
1
2
10
35
35
V
V
V
V
mA
mA
mA
MIN.
TYP.
MAX. UNIT
Switching times inductive load
(see Figs 10 and 13)
storage time
fall time
I
Con
= 4 A; I
Bon
= 800 mA; V
CL
= 250 V
−
I
Con
= 4 A; I
Bon
= 800 mA; V
CL
= 250 V
−
1.6
150
2.5
400
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
handbook, full pagewidth
10
2
IC
(A)
ICM max
10
IC max
MGB921
II
1
10
−1
I
10
−2
DC
10
−3
BUT18
BUT18A
10
−4
1
10
10
2
10
3
VCE (V)
10
4
T
mb
= 25
°C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1999 Jun 11
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18; BUT18A
handbook, full pagewidth
10
MGB862
Zth j−mb
(K/W)
1
δ
=1
0.75
0.50
0.33
0.20
0.10
10
−1
0.05
0.02
0.01
0
10
−2
10
−3
10
−2
10
−1
1
10
10
2
tp (ms)
10
3
Fig.3 Transient thermal impedance.
MGD283
120
handbook, halfpage
Ptot max
(%)
80
handbook, halfpage
+
50 V
100 to 200
Ω
L
horizontal
oscilloscope
40
300
Ω
vertical
1
Ω
MGE252
6V
30 to 60 Hz
0
0
50
100
Tmb (
o
C)
150
Fig.5
Fig.4 Power derating curve.
Test circuit for collector-emitter
sustaining voltage.
1999 Jun 11
5
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