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BUX10X

Description
25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3
Categorysemiconductor    Discrete semiconductor   
File Size15KB,2 Pages
ManufacturerSEME-LAB
Websitehttp://www.semelab.co.uk
Download Datasheet Parametric View All

BUX10X Overview

25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3

BUX10X Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityNPN
Maximum collector current25 A
Maximum Collector-Emitter Voltage125 V
stateACTIVE
packaging shaperound
Package SizeFlange mounting
Terminal formPIN/PEG
terminal coatingNOT SPECIFIED
Terminal locationBOTTOM
Packaging MaterialsMetal
structuresingle
Shell connectionCOLLECTOR
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor10
Rated crossover frequency8 MHz
BUX10X
MECHANICAL DATA
Dimensions in mm(inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
NPN MULTI - EPITAXIAL
POWER TRANSISTOR
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
22.23
(0.875)
max.
FEATURES
• HIGH CURRENT
• FAST SWITCHING
• HIGH RELIABILITY
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
APPLICATIONS
TO–3
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
• POWER SWITCHING CIRCUITS
• MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg,
T
j
Collector – Base Voltage (I
E
= 0)
Collector – Emitter Voltage (V
BE
= –1.5V)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Peak Collector Current (t
p
= 10 ms)
Base Current
Total Power Dissipation at T
case
£
25°C
Storage Temperature
Junction Temperature
160V
160V
125V
7V
25A
30A
5A
150W
–65 to 200°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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