BUX20
MECHANICAL DATA
Dimensions in mm(inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
HIGH CURRENT
HIGH SPEED
HIGH POWER TRANSISTOR
DESCRIPTION
The BUX20 is a silcon multiepitaxial planar
NPN transistor in modified Jedec TO-3
metal case, intended for use in switching
and linear applications in military and
industrial equipment.
22.23
(0.875)
max.
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–3 PACKAGE (TO-204AA)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
J
Collector – Base Voltage (I
E
= 0)
Collector – Emitter Voltage (V
BE
= –1.5V)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Total Power Dissipation at T
case
≤
25°C
Storage Temperature
Junction Temperature
160V
160V
125V
7V
50A
60A
10A
350W
–65 to 200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0.97 (0.060)
1.10 (0.043)
Document Number 3246
Issue 1
BUX20
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)*
V
EBO
I
CEO
I
CEX
I
EBO
V
CE(sat)*
V
BE(sat)*
h
FE*
I
S/b
f
T
t
on
t
s
t
f
Collector - Emitter Sustaining
Voltage
Emitter – BaseVoltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector – Emitter
Saturation Voltage
Base – Emitter Saturation
Voltage
DC Current Gain
Second Breakdown
Collector Current
Transition Frequency
Turn–On Time
Storage Time
Fall Time
Test Conditions
I
C
= 200mA
I
E
= 50mA
V
CE
= 100V
V
CE
= 160V
I
C
= 0
I
C
= 25A
I
C
= 50A
I
C
= 50A
I
C
= 25A
I
C
= 50A
V
CE
= 40V
V
CE
= 20V
I
C
= 2A
f = 10MHz
I
C
= 50A
V
CC
= 60V
I
C
= 50A
I
B2
= – 5A
I
B1
=5A
V
CC
= 60V
I
B1
=5A
I
C
= 0
I
B
= 0
V
BE
= –1.5V
T
C
= 125°C
V
EB
= 5V
I
B
= 2.5A
I
B
= 5A
I
B
= 5A
V
CE
= 2V
V
CE
= 4V
t = 1s
t = 1s
V
CE
= 15V
Min.
125
7
Typ.
Max. Unit
V
V
3
3
12
1
mA
mA
mA
V
V
—
A
MHz
0.3
0.55
1.35
20
10
0.15
17.5
8
0.4
0.85
0.1
0.6
1.2
2
60
1.5
1.2
0.3
µs
* Pulsed: pulse duration = 300ms, duty cycle
≤
2%
THERMAL CHARACTERISTICS
R
θJC
Thermal Resistance Junction to Case
0.5
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3246
Issue 1
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