HIGH CURRENT NPN SILICON TRANSISTOR
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | STMicroelectronics |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 15 A |
| Collector-emitter maximum voltage | 200 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 8 |
| JEDEC-95 code | TO-3 |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 120 W |
| Maximum power dissipation(Abs) | 120 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 8 MHz |
| Maximum off time (toff) | 2500 ns |
| Maximum opening time (tons) | 1000 ns |
| VCEsat-Max | 1.6 V |
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