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Datasheet> All Categories > Discrete semiconductor> The transistor> BUX48
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BUX48

Description
15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size174KB，8 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BUX48 Overview

15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-204AA

BUX48 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-based maximum capacity350 pF
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment175 W
Maximum power dissipation(Abs)175 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)5 MHz
Maximum off time (toff)2400 ns
Maximum opening time (tons)900 ns
VCEsat-Max5 V

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•
Switching Regulators
•
Inverters
•
Solenoid and Relay Drivers
•
Motor Controls
•
Deflection Circuits
Fast Turn–Off Times
60 ns Inductive Fall Time — 25
_
C (Typ)
120 ns Inductive Crossover Time — 25
_
C (Typ)
Operating Temperature Range –65 to + 200
_
C
100
_
C Performance Specified for:
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. They are particularly
suited for line–operated SWITCHMODE applications such as:
SWITCHMODE is a trademark of Motorola, Inc.
SWITCHMODE II Series
NPN Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation — TC = 25
_
C
— TC = 100
_
C
Derate above 25
_
C
Base Current — Continuous
— Peak (1)
Collector Current — Continuous
— Peak (1)
— Overload
Emitter Base Voltage
Collector–Emitter Voltage (VBE = – 1.5 V)
Collector–Emitter Voltage
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltage
Leakage Currents (125
_
C)
Characteristic
Rating
v
10%.
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VCEX
R
θJC
VEB
IC
ICM
IOI
IB
IBM
PD
TL
BUX48
850
400
– 65 to + 200
15 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
V(BR)CEO
850 – 1000 VOLTS
V(BR)CEX
175 WATTS
Max
275
175
100
1
BUX48
BUX48A
5
20
15
30
60
1
7
Order this document
by BUX48/D
CASE 1–07
TO–204AA
(TO–3)
BUX48A
1000
450
3–401
Watts
_
C/W
W/
_
C
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_
C
_
C

BUX48 Related Products

BUX48 BUX48A
Description 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-204AA 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Is it Rohs certified? incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP )
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknown unknow
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 15 A 15 A
Collector-based maximum capacity 350 pF 350 pF
Collector-emitter maximum voltage 400 V 450 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 8 8
JEDEC-95 code TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Maximum power consumption environment 175 W 175 W
Maximum power dissipation(Abs) 175 W 175 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 5 MHz 5 MHz
Maximum off time (toff) 2400 ns 2400 ns
Maximum opening time (tons) 900 ns 900 ns
VCEsat-Max 5 V 5 V

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