INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2N6759
DESCRIPTION
·VGS
Rated at
±20V
·Silicon
Gate for fast switching speeds
·I
DSS
、R
DS(ON)
,specified at elevated temperature
·Low
drive reqirements
APPLICATIONS
designed for high power ,high speed application ,such as
switching applies,UPS,AC and DC motor controls ,
relay and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=37℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
350
±20
4.5
75
-55~150
-55~150
UNIT
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.67
UNIT
℃/W
isc website:www.iscsemi.cn
1
isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
SYMBOL
V
(BR)DSS
V
GS(TH)
R
DS(ON)
I
GSS
I
DSS
V
SD
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-stage Resistance
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Diode Forward Voltage
CONDITIONS
V
GS
= 0; I
D
= 1mA
V
DS
= V
GS
; I
D
= 1mA
V
GS
= 10V; I
D
= 3.5A
V
GS
= 20V;V
DS
= 0
V
DS
= 350V; V
GS
= 0
I
F
= 4.5A; V
GS
= 0
MIN
350
2
2N6759
MAX
UNIT
V
4
1.5
100
1
1.4
V
Ω
nA
mA
V
isc website:www.iscsemi.cn
2
isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn