INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2N6770
DESCRIPTION
·VGS
Rated at
±20V
·Silicon
Gate for fast switching speeds
·I
DSS
、R
DS(ON)
,specified at elevated temperature
·Low
drive requirements
APPLICATIONS
designed for high voltage ,high speed application ,such as
off-line switching power applies,UPS,AC and DC motor controls ,
relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=37℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
500
±20
12
150
-55~150
-55~150
UNIT
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
0.83
UNIT
℃/W
isc website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
SYMBOL
V
(BR)DSS
V
GS(TH)
R
DS(ON)
I
GSS
I
DSS
V
SD
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-stage Resistance
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Diode Forward Voltage
CONDITIONS
V
GS
= 0; I
D
= 1mA
V
DS
= V
GS
; I
D
= 1mA
V
GS
= 10V; I
D
= 7.75A
V
GS
= 20V;V
DS
= 0
V
DS
= 500V; V
GS
= 0
I
F
= 12A; V
GS
= 0
MIN
500
2
2N6770
MAX
UNIT
V
4
0.4
100
1
1.6
V
Ω
nA
mA
V
isc website：www.iscsemi.cn
2
isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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