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BAV19W

Description
0.2 A, 120 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size101KB,3 Pages
ManufacturerNanjing International Group Co.,Ltd
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BAV19W Overview

0.2 A, 120 V, SILICON, SIGNAL DIODE

0.2 A, 120 V, 硅, 信号二极管

BAV19W Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSOD-123, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin silver
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.4100 W
Diode typeSignal diode
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage120 V
Maximum average forward current0.2000 A

BAV19W Preview

Download Datasheet
BAV19W, BAV20W, BAV21W
Silicon Epitaxial Planar Diodes
High Voltage Switching Diode
PINNING
PIN
DESCRIPTION
Cathode
Anode
2
Features
• Fast switching speed
• Surface mount package ideally suited for
automatic insertion
1
2
1
JX
Top View
Marking Code:
JX
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
BAV19W
BAV20W
BAV21W
BAV19W
BAV20W
BAV21W
Symbol
V
RRM
V
R
I
F(AV)
I
FM
I
FRM
at t = 1 ms
at t = 1 s
I
FSM
P
d
T
j
, T
stg
Value
120
200
250
100
150
200
200
400
625
2.5
0.5
250
- 65 to + 150
Unit
V
V
mA
mA
mA
A
mW
O
Average Rectified Forward Current
Forward Continuous Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current
Power Dissipation
Operating and Storage Temperature Range
C
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
at I
F
= 200 mA
Reverse Breakdown Voltage
at I
R
= 100 µA
BAV19W
BAV20W
BAV21W
BAV19W
BAV20W
BAV21W
Symbol
V
F
Min.
-
-
120
200
250
-
-
-
-
-
Max.
1
1.25
-
-
-
100
100
100
5
50
Unit
V
V
(BR)R
V
Reverse Current
at V
R
= 100 V
at V
R
= 150 V
at V
R
= 200 V
Total Capacitance
at V
R
= 0 , f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 30 mA, I
rr
= 0.1I
R
, R
L
= 100
I
R
nA
C
T
t
rr
pF
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